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IRFS3607PBF

IRFS3607PBF
Mfr. #:
IRFS3607PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS3607PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3607PBF DatasheetIRFS3607PBF Datasheet (P4-P6)IRFS3607PBF Datasheet (P7-P9)IRFS3607PBF Datasheet (P10-P12)IRFS3607PBF Datasheet (P13-P15)IRFS3607PBF Datasheet (P16-P18)IRFS3607PBF Datasheet (P19-P21)IRFS3607PBF Datasheet (P22-P24)IRFS3607PBF Datasheet (P25-P27)IRFS3607PBF Datasheet (P28-P30)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
7.34 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
56 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
140 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
115 S
Abfallzeit:
96 ns
Produktart:
MOSFET
Anstiegszeit:
110 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
43 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
SP001557342
Gewichtseinheit:
0.139332 oz
Tags
IRFS3607P, IRFS36, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;D2Pak;PD 140W;VGS +/-2
***ure Electronics
Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFS3607PBF
DISTI # IRFS3607PBF-ND		Infineon Technologies AGMOSFET N-CH 75V 80A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRFS3607PBF
    DISTI # SP001557342    		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK (Alt: SP001557342)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.6269
    • 10:€0.5569
    • 25:€0.5019
    • 50:€0.4559
    • 100:€0.4179
    • 500:€0.3859
    • 1000:€0.3579
    IRFS3607PBF
    DISTI # 70017891    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 7.34 Milliohms,ID 80A,D2Pak,PD 140W,VGS +/-2
    RoHS: Compliant    		0
    • 550:$1.7800
    IRFS3607PBF
    DISTI # 942-IRFS3607PBF    		Infineon Technologies AGMOSFET 75V 1 N-CH HEXFET 9mOhms 56nC
    RoHS: Compliant    		132
    • 1:$1.4400
    • 10:$1.2300
    • 100:$0.9400
    • 500:$0.8310
    • 1000:$0.6560
    IRFS3607PBF
    DISTI # 6887074    		Infineon Technologies AGMOSFET N-CHANNEL 75V 80A HEXFET D2PAK, PK705
    • 5:£1.1120
    • 25:£0.8900
    • 50:£0.7860
    • 100:£0.6800
    • 250:£0.6660
    IRFS3607PBFInternational Rectifier 
    RoHS: Compliant    		Europe - 670
      IRFS3607PBF
      DISTI # 1602232      		Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant      		20
      • 5:£1.0300
      • 25:£0.5820
      • 100:£0.5610
      • 250:£0.5400
      • 500:£0.5180
      IRFS3607PBF
      DISTI # 1602232      		Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant      		20
      • 1:$2.2800
      • 10:$1.9500
      • 100:$1.5000
      • 500:$1.3200
      • 1000:$1.0400
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von IRFS3607PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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