MRF9030LR1

MRF9030LR1
Mfr. #:
MRF9030LR1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors 30W RF PWR FET NI-360L
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF9030LR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
65 V
Gewinnen:
19 dB
Ausgangsleistung:
30 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-360-3
Verpackung:
Spule
Aufbau:
Single
Höhe:
4.45 mm
Länge:
20.45 mm
Arbeitsfrequenz:
1 GHz
Serie:
MRF9030L
Typ:
HF-Leistungs-MOSFET
Breite:
5.97 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Pd - Verlustleistung:
92 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 0.5 V, 15 V
Vgs th - Gate-Source-Schwellenspannung:
2.9 V
Gewichtseinheit:
0.103628 oz
Tags
MRF9030LR, MRF9030L, MRF903, MRF90, MRF9, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
FET RF 68V 945MHZ NI-360 / RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
***et
Transistor RF FET N-CH 68V 945MHz 3-Pin NI-360 T/R
***nell
RF, MOSFET, N-CH, 945MHZ, 30W, NI360; Drain Source Voltage Vds:68V; Continuous Drain Current Id:100µA; Power Dissipation Pd:92W; No. of Pins:2Pins; MSL:-; SVHC:No SVHC (27-Jun-2018); Power Dissipation Max:92W; Transistor Type:RF FET
Teil # Mfg. Beschreibung Aktie Preis
MRF9030LR1
DISTI # MRF9030LR1-ND
NXP SemiconductorsFET RF 68V 945MHZ NI-360
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Limited Supply - Call
    MRF9030LR1
    DISTI # MRF9030LR1
    Avnet, Inc.Trans MOSFET N-CH 68V 3-Pin NI-360 T/R - Bulk (Alt: MRF9030LR1)
    RoHS: Compliant
    Min Qty: 9
    Container: Bulk
    Americas - 0
    • 90:$36.0900
    • 45:$36.7900
    • 27:$38.1900
    • 18:$39.6900
    • 9:$41.2900
    MRF9030LR1
    DISTI # 22M7949
    NXP SemiconductorsRF FET Transistor, 68 V, 100 A, 92 W0
      MRF9030LR1
      DISTI # 841-MRF9030LR1
      NXP SemiconductorsRF MOSFET Transistors 30W RF PWR FET NI-360L
      RoHS: Compliant
      0
        MRF9030LR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
        RoHS: Compliant
        1191
        • 1000:$37.3700
        • 500:$39.3400
        • 100:$40.9500
        • 25:$42.7100
        • 1:$45.9900
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von MRF9030LR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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