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STL33N60M2

STL33N60M2
Mfr. #:
STL33N60M2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STL33N60M2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STL33N60M2 Mehr Informationen STL33N60M2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerFLAT-8x8-HV-5
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21.5 A
Rds On - Drain-Source-Widerstand:
135 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
4.7 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Spule
Serie:
STL33N60M2
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Tags
STL33N60M, STL33N60, STL33, STL3, STL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
***ure Electronics
N-Channel 600 V 21.5 A 135 mOhm MDmesh M2 Power MosFet - PowerFLAT 8 x 8
***p One Stop
Trans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R
***el Electronic
Flash Mem Serial 3.3V 2G-Bit 256M x 8 30us 48-Pin TSOP-I
***icroelectronics SCT
Power MOSFETs, 600V, 22A, PowerFLAT 8x8 HV, Tape and Reel
***i-Key
MOSFET N-CH 600V 22A PWRFLAT HV
***ronik
N-CH 600V 22A 115mOhm PFL8x8HV
***icroelectronics
N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV
***p One Stop
Trans MOSFET N-CH 650V 22.5A 4-Pin Power Flat EP T/R
***r Electronics
Power Field-Effect Transistor, 22.5A I(D), 650V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET N-CH 650V 3.2A PWRFLAT88
*** Services
CoC and 2-years warranty / RFQ for pricing
***icroelectronics
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package
***ure Electronics
N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 500V 22A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 500V, 22A, 190W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***r Electronics
Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
***ure Electronics
N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 600 V 135 mOhm 77 nC SMT E Series Power Mosfet - PowerPAK 8x8
***el Electronic
VISHAY SIHH26N60E-T1-GE3 Power MOSFET, N Channel, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
***nell
MOSFET, N-CH, 600V, 25A, POWERPAK-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.117ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 202W; Transistor Case Style: PowerPAK; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***ure Electronics
E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow
***ical
Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R
***ark
MOSFET, N-CH, 600V, 20A, 150DEG C, 122W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.Learn More
Teil # Mfg. Beschreibung Aktie Preis
STL33N60M2
DISTI # V72:2272_17703900		STMicroelectronicsTrans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R
RoHS: Compliant		590
  • 500:$2.7279
  • 250:$3.0099
  • 100:$3.1780
  • 25:$3.5950
  • 10:$3.6360
  • 1:$4.1740
STL33N60M2
DISTI # 497-14969-1-ND		STMicroelectronicsMOSFET N-CH 600V 21.5A PWRFLAT88
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3251In Stock
  • 1000:$2.9313
  • 500:$3.4757
  • 100:$4.2923
  • 10:$5.2340
  • 1:$5.8600
STL33N60M2
DISTI # 497-14969-6-ND		STMicroelectronicsMOSFET N-CH 600V 21.5A PWRFLAT88
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3251In Stock
  • 1000:$2.9313
  • 500:$3.4757
  • 100:$4.2923
  • 10:$5.2340
  • 1:$5.8600
STL33N60M2
DISTI # 497-14969-2-ND		STMicroelectronicsMOSFET N-CH 600V 21.5A PWRFLAT88
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$2.7036
STL33N60M2
DISTI # 27007136		STMicroelectronicsTrans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R
RoHS: Compliant		3000
  • 3000:$2.7135
STL33N60M2
DISTI # 25929675		STMicroelectronicsTrans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R
RoHS: Compliant		590
  • 500:$2.7279
  • 250:$3.0099
  • 100:$3.1780
  • 25:$3.5950
  • 10:$3.6360
  • 3:$4.1740
STL33N60M2
DISTI # STL33N60M2		STMicroelectronicsTrans MOSFET N-CH 650V 21.5A 4-Pin PowerFLAT T/R (Alt: STL33N60M2)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    STL33N60M2
    DISTI # STL33N60M2    		STMicroelectronicsTrans MOSFET N-CH 650V 21.5A 4-Pin PowerFLAT T/R (Alt: STL33N60M2)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€2.1900
    • 6000:€2.0900
    • 12000:€2.0900
    • 18000:€1.8900
    • 30000:€1.7900
    STL33N60M2
    DISTI # 511-STL33N60M2    		STMicroelectronicsMOSFET N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
    RoHS: Compliant    		1531
    • 1:$4.9000
    • 10:$4.1600
    • 100:$3.6100
    • 250:$3.4200
    • 500:$3.0700
    • 1000:$2.5900
    STL33N60M2
    DISTI # TMOS2264    		STMicroelectronicsN-CH 600V22A 115mOhm PFL8x8HV
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 3000:$3.3900
    STL33N60M2STMicroelectronics 640
      STL33N60M2
      DISTI # C1S730200974785      		STMicroelectronicsTrans MOSFET N-CH 600V 21.5A 5-Pin Power Flat T/R
      RoHS: Compliant      		590
      • 250:$3.1080
      • 100:$3.2530
      • 25:$3.6460
      • 10:$3.6570
      • 1:$4.1620
      STL33N60M2
      DISTI # C1S730201028843      		STMicroelectronicsTrans MOSFET N-CH 600V 21.5A 5-Pin Power Flat T/R
      RoHS: Compliant      		3000
      • 3000:$2.3200
      Bild Teil # Beschreibung
      431256031716

      Mfr.#: 431256031716

      OMO.#: OMO-431256031716

      		 Tactile Switches WS-TATU Tact RA THT H:3.15mm Blck Act
      431256031716

      Mfr.#: 431256031716

      OMO.#: OMO-431256031716-WURTH-ELECTRONICS

      		 SWITCH TACTILE SPST-NO 0.05A 12V
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von STL33N60M2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,97 $
      3,97 $
      10
      3,37 $
      33,70 $
      100
      2,92 $
      292,00 $
      250
      2,77 $
      692,50 $
      500
      2,49 $
      1 245,00 $
      1000
      2,10 $
      2 100,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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