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FFSP05120A

FFSP05120A
Mfr. #:
FFSP05120A
Hersteller:
ON Semiconductor
Beschreibung:
Schottky Diodes & Rectifiers 1200V SiC SBD 5A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FFSP05120A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FFSP05120A Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-2
Wenn - Vorwärtsstrom:
5 A
Vrrm - Repetitive Sperrspannung:
1200 V
Vf - Durchlassspannung:
1.45 V
Ifsm - Vorwärtsstoßstrom:
42 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
200 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FFSP05120A
Verpackung:
Rohr
Marke:
ON Semiconductor
Pd - Verlustleistung:
94 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
800
Unterkategorie:
Dioden & Gleichrichter
Gewichtseinheit:
0.076192 oz
Tags
FFSP0, FFSP, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Silicon Carbide Schottky Diode 1200 V 5 A 2-Pin TO-220 Through Hole Tube
***ical
Diode Schottky SiC 1.2KV 9.2A 2-Pin(2+Tab) TO-220 Tube
***Semiconductor
SiC Diode, 1200V, 5A, TO-220-2
***ark
Sic 1200V Diode / Tube
***i-Key
1200V SIC SBD 10A
***rchild Semiconductor
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:9.2A; Total Capacitive Charge Qc:37nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2018); Forward Current If(AV):9.2A; Forward Surge Current Ifsm Max:42A; Forward Voltage VF Max:1.75V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC, 1,2KV, 9,2A, TO220-2; Gamma Prodotti:-; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:1.2kV; Corrente Diretta Continua If:9.2A; Potenza Reattiva Capacitiva Qc:37nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Corrente Diretta If(AV):9.2A; Corrente di Picco Diretta Ifsm Max:42A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.75V
FFSP SiC Schottky Diodes
ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Teil # Mfg. Beschreibung Aktie Preis
FFSP05120A
DISTI # 28996035		ON SemiconductorSilicon Carbide schottky diode1600
  • 800:$1.9503
FFSP05120A
DISTI # FFSP05120A-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV TO220-2
RoHS: Not compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$2.0684
FFSP05120A
DISTI # V36:1790_18470537		ON SemiconductorSilicon Carbide schottky diode0
  • 800000:$1.3820
  • 400000:$1.3850
  • 80000:$1.6100
  • 8000:$2.0030
  • 800:$2.0680
FFSP05120A
DISTI # FFSP05120A		ON SemiconductorSilicon Carbide Schottky Diode 1200 V 5 A 2-Pin TO-220 Through Hole Tube - Rail/Tube (Alt: FFSP05120A)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$1.3900
  • 800:$1.4900
  • 1600:$1.4900
  • 3200:$1.4900
  • 4800:$1.4900
FFSP05120A
DISTI # 27AC5739		ON SemiconductorSIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:9.2A,Total Capacitive Charge Qc:37nC,Diode Case Style:TO-220,No. of754
  • 500:$1.8100
  • 250:$1.8600
  • 100:$2.1700
  • 50:$2.4500
  • 25:$2.5900
  • 10:$2.9200
  • 1:$3.3300
FFSP05120A
DISTI # 512-FFSP05120A		ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 5A
RoHS: Compliant		570
  • 1:$3.1400
  • 10:$2.6700
  • 100:$2.3100
  • 250:$2.1900
  • 500:$1.9700
FFSP05120A
DISTI # 2773494		ON SemiconductorSIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2
RoHS: Not Compliant		754
  • 1000:$2.3900
  • 500:$2.6400
  • 250:$3.0200
  • 100:$3.3500
  • 10:$3.8700
  • 1:$4.4400
FFSP05120A
DISTI # 2773494		ON SemiconductorSIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2
RoHS: Not Compliant		754
  • 500:£1.4300
  • 250:£1.5900
  • 100:£1.6700
  • 10:£1.9400
  • 1:£2.5600
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Verfügbarkeit
Aktie:
562
Auf Bestellung:
2545
Menge eingeben:
Der aktuelle Preis von FFSP05120A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,14 $
3,14 $
10
2,67 $
26,70 $
100
2,31 $
231,00 $
250
2,19 $
547,50 $
500
1,97 $
985,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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