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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 21550In Stock |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 21550In Stock |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 15000In Stock |
|
| BSZ130N03LSG DISTI # BSZ130N03LSG | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R - Bulk (Alt: BSZ130N03LSG) RoHS: Not Compliant Min Qty: 1471 Container: Bulk | Americas - 0 |
|
| BSZ130N03LSG DISTI # BSZ130N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: BSZ130N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ130N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R - Bulk (Alt: BSZ130N03LSGATMA1) RoHS: Compliant Min Qty: 1924 Container: Bulk | Americas - 0 |
|
| BSZ130N03LSGATMA1 DISTI # SP000278810 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSZ130N03LSGATMA1 DISTI # 60R2543 | Infineon Technologies AG | MOSFET, N CH, 35A, 30V, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes | 7050 |
|
| BSZ130N03LS G DISTI # 726-BSZ130N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 RoHS: Compliant | 10558 |
|
| BSZ130N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5307 |
|
| BSZ130N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3430 |
|
| BSZ130N03LSGATMA1 DISTI # 9062909P | Infineon Technologies AG | MOSFET N-CHANNEL 30V 35A OPTIMOS TSDSON8, RL | 120 |
|
| BSZ130N03LSG | Infineon Technologies AG | 2897 | ||
| BSZ130N03LSGATMA1 DISTI # 1775506 | Infineon Technologies AG | MOSFET, N CH, 35A, 30V, PG-TSDSON-8 | 7070 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: 130N03 OMO.#: OMO-130N03-1190 |
Neu und Original |
|
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Mfr.#: 130N03L OMO.#: OMO-130N03L-1190 |
Neu und Original |
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Mfr.#: 130N03M OMO.#: OMO-130N03M-1190 |
Neu und Original |
|
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Mfr.#: 130N10F3 OMO.#: OMO-130N10F3-1190 |
Neu und Original |
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Mfr.#: 130N20 OMO.#: OMO-130N20-1190 |
Neu und Original |
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Mfr.#: 130N6 OMO.#: OMO-130N6-1190 |
Neu und Original |
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Mfr.#: 130N6F7 OMO.#: OMO-130N6F7-1190 |
Neu und Original |
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Mfr.#: 130NF20D OMO.#: OMO-130NF20D-1190 |
Neu und Original |
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Mfr.#: 130NL OMO.#: OMO-130NL-1190 |
Neu und Original |
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Mfr.#: 130NS80 OMO.#: OMO-130NS80-1190 |
Neu und Original |