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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FQB3N30TM DISTI # FQB3N30TM-ND | ON Semiconductor | MOSFET N-CH 300V 3.2A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB3N30TM DISTI # 512-FQB3N30TM | ON Semiconductor | MOSFET 300V N-Channel QFET RoHS: Compliant | 0 | |
| FQB3N30TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.2A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 2934 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FQB6N80TM OMO.#: OMO-FQB6N80TM |
MOSFET 800V N-Channel QFET |
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Mfr.#: FQB7N60TM OMO.#: OMO-FQB7N60TM |
MOSFET 600V N-Channel QFET |
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Mfr.#: FQB7N65CTM OMO.#: OMO-FQB7N65CTM |
MOSFET 650V 7A NCH MOSFET |
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Mfr.#: FQB9N50CFTM OMO.#: OMO-FQB9N50CFTM |
MOSFET 500V N-CH MOSFET |
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Mfr.#: FQB17N08TM |
MOSFET N-CH 80V 16.5A D2PAK |
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Mfr.#: FQB25N33 OMO.#: OMO-FQB25N33-1190 |
Neu und Original |
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Mfr.#: FQB34N20TM OMO.#: OMO-FQB34N20TM-1190 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: FQB50N06 OMO.#: OMO-FQB50N06-1190 |
MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage V |
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Mfr.#: FQB9N50C OMO.#: OMO-FQB9N50C-1190 |
Neu und Original |
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Mfr.#: FQB34N20LTM-CUT TAPE |
Neu und Original |