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IRFSL3006PBF

IRFSL3006PBF
Mfr. #:
IRFSL3006PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 60V 270A 2.5mOhm 200nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFSL3006PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFSL3006PBF DatasheetIRFSL3006PBF Datasheet (P4-P6)IRFSL3006PBF Datasheet (P7-P9)IRFSL3006PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
270 A
Rds On - Drain-Source-Widerstand:
2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
200 nC
Pd - Verlustleistung:
375 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001573396
Gewichtseinheit:
0.084199 oz
Tags
IRFSL3, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 2.5 mOhm 200 nC HEXFET® Power Mosfet - TO-262-3
***et
Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-262 Tube
*** Electronic Components
MOSFET MOSFT 60V 270A 2.5mOhm 200nC
***
N-Channel 6 V 195A (Tc) 375W (Tc) Through Hole TO-262
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:270A; On Resistance, Rds(on):2.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-262-3
***(Formerly Allied Electronics)
MOSFET, 60V, 270A, 2.4 MOHM, 91 NC QG, LOGIC LEVEL, TO262
***et
Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-262
*** Electronic Components
MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl
***ment14 APAC
MOSFET, N-CH, 60V, 195A, TO-262
***ineon
Benefits: RoHS Compliant; Logic Level
***
N-Channel 6 V 195A (Tc) 38W (Tc) Through Hole TO-262
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:195A; On Resistance, Rds(on):1.9mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-262 Tube
***(Formerly Allied Electronics)
MOSFET, 60V, 210A, 3 MOHM, 120 NC QG, TO-262
*** Electronic Components
MOSFET MOSFT 60V 210A 3mOhm 120nC
***
N-Channel 6 V 12A (Tc) 3W (Tc) Through Hole TO-262
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:230A; On Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:3V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-262 Rail
***emi
75A, 55V, 0.008 Ohm, N-Channel UltraFET® Power MOSFETs.
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
***ernational Rectifier
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et Europe
Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-262
***(Formerly Allied Electronics)
MOSFET; 75V; 100A; 7.8 MOHM; 160 NC QG; TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:100A; On Resistance, Rds(on):7.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
P CHANNEL MOSFET, -55V, 31A, TO-262; Tra; P CHANNEL MOSFET, -55V, 31A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V
Teil # Mfg. Beschreibung Aktie Preis
IRFSL3006PBF
DISTI # 30700756		Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		1000
  • 200:$3.7102
  • 100:$4.0545
  • 50:$4.4880
  • 10:$4.9980
  • 4:$6.5280
IRFSL3006PBF
DISTI # 27073592		Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		600
  • 450:$2.0528
  • 300:$2.1349
  • 150:$2.1934
  • 50:$2.4634
IRFSL3006PBF
DISTI # IRFSL3006PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 195A TO262
RoHS: Compliant
Min Qty: 1
Container: Tube		2859In Stock
  • 1000:$3.2820
  • 500:$3.8916
  • 100:$4.8059
  • 50:$5.2748
  • 1:$6.5600
IRFSL3006PBF
DISTI # C1S322000496376		Infineon Technologies AGMOSFETs
RoHS: Compliant		1000
  • 1000:$2.7600
  • 200:$2.9100
  • 100:$3.1800
  • 50:$3.5200
  • 10:$3.9200
  • 1:$5.1200
IRFSL3006PBF
DISTI # IRFSL3006PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube (Alt: IRFSL3006PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$2.3900
  • 2000:$2.2900
  • 4000:$2.1900
  • 6000:$2.1900
  • 10000:$2.0900
IRFSL3006PBF
DISTI # 70019761		Infineon Technologies AGIRFSL3006PBF N-channel MOSFET Transistor,270 A,60 V,3-Pin TO-262
RoHS: Compliant		0
  • 300:$6.8500
IRFSL3006PBF
DISTI # 942-IRFSL3006PBF		Infineon Technologies AGMOSFET MOSFT 60V 270A 2.5mOhm 200nC
RoHS: Compliant		0
  • 1:$5.6500
  • 10:$4.8000
  • 100:$4.1600
  • 250:$3.9500
  • 500:$3.5400
Bild Teil # Beschreibung
IRFSL3206PBF

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IRFSL3207ZPBF

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 MOSFET MOSFT 75V 170A 4.1mOhm 120nC
IRFSL3806PBF

Mfr.#: IRFSL3806PBF

OMO.#: OMO-IRFSL3806PBF

 MOSFET MOSFT 60V 43A 16.2mOhm 22nC
IRFSL3004PBF

Mfr.#: IRFSL3004PBF

OMO.#: OMO-IRFSL3004PBF

 MOSFET MOSFT 40V 240A 1.7mOhm 160nC
IRFSL3207

Mfr.#: IRFSL3207

OMO.#: OMO-IRFSL3207-INFINEON-TECHNOLOGIES

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IRFSL33N15D

Mfr.#: IRFSL33N15D

OMO.#: OMO-IRFSL33N15D-INFINEON-TECHNOLOGIES

 MOSFET N-CH 150V 33A TO-262
IRFSL33N15DTRRP

Mfr.#: IRFSL33N15DTRRP

OMO.#: OMO-IRFSL33N15DTRRP-INFINEON-TECHNOLOGIES

 MOSFET N-CH 150V 33A TO-262-3
IRFSL3306PBF

Mfr.#: IRFSL3306PBF

OMO.#: OMO-IRFSL3306PBF-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET MOSFT 60V 160A 4.2mOhm 85nC
IRFSL3507

Mfr.#: IRFSL3507

OMO.#: OMO-IRFSL3507-INFINEON-TECHNOLOGIES

 MOSFET N-CH 75V 97A TO-262
IRFSL38N20DPBF

Mfr.#: IRFSL38N20DPBF

OMO.#: OMO-IRFSL38N20DPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 200V 43A TO-262-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRFSL3006PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,64 $
5,64 $
10
4,79 $
47,90 $
100
4,15 $
415,00 $
250
3,94 $
985,00 $
500
3,53 $
1 765,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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