IRFY440

Mfr. #:: IRFY440
Hersteller:: IR
Beschreibung:: Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY440)
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRFY440 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: IR

Produktkategorie: IC-Chips

Tags: IRFY4, IRFY, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFY440 Beschreibung

***ernational Rectifier: 500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package

***ure Electronics: Single N-Channel 500 V 100 W 68.5 nC Hexfet Power Mosfet Flange Mount - TO-257AA

***ical: Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257AA

***ponent Stockers USA: 5.5 A 500 V 0.98 ohm N-CHANNEL Si POWER MOSFET

***(Formerly Allied Electronics): IRF840PBF N-channel MOSFET Transistor; 8 A; 500 V; 3-Pin TO-220AB

*** Source Electronics: MOSFET N-CH 500V 8A TO-220AB / Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 8A Tc 8A 125W 20ns

*** electronic: Transistor MOSFET N-Ch. 8A/500V TO220

***ure Electronics: Single N-Channel 500 V 0.85 O Flange Mount Power Mosfet - TO-220

***nsix Microsemi: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 500V, 8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:8A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 500 V 0.85 Ohms Flange Mount Power Mosfet - TO-247AC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:8.8A; On Resistance, Rds(on):850mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ser: Single-Gate MOSFET Transistors N-Chan 500V 8.8 Amp

***ical: Trans MOSFET N-CH 500V 8.8A 3-Pin(3+Tab) TO-247AC

***(Formerly Allied Electronics): Pwr MOSFET, 500V Single N-Ch. HEXFET; TO-247AC

***ukat: N-Ch 500V 8,8A 150W 0,85R TO247AC

***p One Stop: Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220FP Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.0pF 50volts C0G +/-0.5pF

***ark: Mosfet, N-Ch, 500V, 18.1A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 550 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 7.6 / Rise Time ns = 6.4 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 30.4

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***ical: Trans MOSFET N-CH 500V 7.1A 3-Pin(3+Tab) TO-220 Tube

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.47ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation

***p One Stop: Trans MOSFET N-CH 560V 7.6A 3-Pin(3+Tab) TO-220AB Tube

***ponent Stockers USA: 7.6 A 500 V 0.6 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ark: Mosfet, N-Ch, 560V, 7.6A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(On):0.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***emi: N-Channel Power MOSFET, UniFETTM II, 500 V, 8 A, 850 mΩ, TO-220

***et: Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 Rail

*** Stop Electro: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRFY440 DISTI # IRFY440	Infineon Technologies AG	Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY440) RoHS: Not Compliant Min Qty: 25 Container: Bulk	Americas - 0	25:$76.8900 27:$74.0900 52:$65.9900 125:$60.9900 250:$57.3900
IRFY440C DISTI # IRFY440C	Infineon Technologies AG	Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY440C) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$144.0900 52:$138.8900 102:$126.3900 250:$112.9900 500:$110.9900
IRFY440CM DISTI # IRFY440CM	Infineon Technologies AG	Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY440CM) RoHS: Not Compliant Min Qty: 25 Container: Bulk	Americas - 0	25:$150.7900 27:$145.3900 52:$138.8900 125:$126.9900 250:$115.6900
IRFY440CSCV DISTI # IRFY440CSCV	Infineon Technologies AG	Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257AA TXV Level Screening - Bulk (Alt: IRFY440CSCV) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$304.3900 52:$293.3900 102:$269.0900 250:$243.0900 500:$238.7900
IRFY440CSCX DISTI # IRFY440CSCX	Infineon Technologies AG	Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257 TX Level Screening - Bulk (Alt: IRFY440CSCX) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$280.1900 52:$270.0900 102:$246.4900 250:$221.2900 500:$217.3900
IRFY440CMSCV DISTI # IRFY440CMSCV	Infineon Technologies AG	Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-257AA TXV Level Screening - Bulk (Alt: IRFY440CMSCV) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$303.0900 52:$292.0900 102:$274.0900 250:$249.0900 500:$244.6900

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von IRFY440 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~86,08 $~~; ~~86,08 $~~

10: ~~81,78 $~~; ~~817,81 $~~

100: ~~77,48 $~~; ~~7 747,65 $~~

500: ~~73,17 $~~; ~~36 586,15 $~~

1000: ~~68,87 $~~; ~~68 868,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IRFY4 5
IRFY 33
IRF 8615

IRFY440

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes