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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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PHB21N06LT,118 DISTI # 1727-4762-1-ND | Nexperia | MOSFET N-CH 55V 19A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1116In Stock |
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PHB21N06LT,118 DISTI # 1727-4762-6-ND | Nexperia | MOSFET N-CH 55V 19A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1116In Stock |
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PHB21N06LT,118 DISTI # 1727-4762-2-ND | Nexperia | MOSFET N-CH 55V 19A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 800In Stock |
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PHB21N06LT,118 DISTI # PHB21N06LT,118 | Nexperia | Trans MOSFET N-CH 55V 19A 3-Pin(2+Tab) D2PAK T/R (Alt: PHB21N06LT,118) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Europe - 0 |
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PHB21N06LT,118 DISTI # PHB21N06LT,118 | Nexperia | Trans MOSFET N-CH 55V 19A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PHB21N06LT,118) RoHS: Compliant Min Qty: 4800 Container: Reel | Americas - 0 |
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PHB21N06LT,118 DISTI # PHB21N06LT118 | Nexperia | Trans MOSFET N-CH 55V 19A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: PHB21N06LT118) RoHS: Not Compliant Min Qty: 1389 Container: Bulk | Americas - 0 |
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PHB21N06LT,118 DISTI # 771-PHB21N06LT118 | Nexperia | MOSFET TAPE13 PWR-MOS RoHS: Compliant | 3283 |
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PHB21N06LT /T3 DISTI # 771-PHB21N06LT/T3 | NXP Semiconductors | MOSFET TAPE13 PWR-MOS RoHS: Compliant | 0 | |
PHB21N06LT118 | NXP Semiconductors | Now Nexperia PHB21N06LT - Power Field-Effect Transistor, 19A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK RoHS: Not Compliant | 178 |
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PHB21N06LT,118 | 910 |
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: PHB21N06LT,118 OMO.#: OMO-PHB21N06LT-118 |
MOSFET TAPE13 PWR-MOS | |
Mfr.#: PHB21N06LT,118 OMO.#: OMO-PHB21N06LT-118-NEXPERIA |
RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | |
Mfr.#: PHB21N06LT /T3 OMO.#: OMO-PHB21N06LT-T3-1190 |
MOSFET TAPE13 PWR-MOS | |
Mfr.#: PHB21N06 OMO.#: OMO-PHB21N06-1190 |
Neu und Original | |
Mfr.#: PHB21N06LT OMO.#: OMO-PHB21N06LT-1190 |
Neu und Original | |
Mfr.#: PHB21N06LT118 OMO.#: OMO-PHB21N06LT118-1190 |
Now Nexperia PHB21N06LT - Power Field-Effect Transistor, 19A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | |
Mfr.#: PHB21N06T OMO.#: OMO-PHB21N06T-1190 |
Neu und Original |