OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIRC18DP-T1-GE3

SIRC18DP-T1-GE3
Mfr. #:
SIRC18DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIRC18DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRC18DP-T1-GE3 DatasheetSIRC18DP-T1-GE3 Datasheet (P4-P6)SIRC18DP-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIRC18DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
850 uOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
- 16 V, 20 V
Qg - Gate-Ladung:
111 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
54.3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
HERR
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
21 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
16 ns
Tags
SIRC1, SIRC, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 30V 60A POWERPAKSO-8
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:54.3W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 30V, 60A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):850µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:54.3W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SIRC18DP-T1-GE3
DISTI # V72:2272_21388849		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode4407
  • 75000:$0.5302
  • 30000:$0.5332
  • 15000:$0.5362
  • 6000:$0.5393
  • 3000:$0.5423
  • 1000:$0.5453
  • 500:$0.7157
  • 250:$0.8333
  • 100:$0.8607
  • 50:$0.9001
  • 25:$1.0001
  • 10:$1.1112
  • 1:$1.4801
SIRC18DP-T1-GE3
DISTI # V99:2348_21388849		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode0
  • 6000000:$0.5738
  • 3000000:$0.5739
  • 600000:$0.5746
  • 60000:$0.5754
  • 6000:$0.5755
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5320In Stock
  • 1000:$0.6351
  • 500:$0.8045
  • 100:$0.9738
  • 10:$1.2490
  • 1:$1.4000
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5320In Stock
  • 1000:$0.6351
  • 500:$0.8045
  • 100:$0.9738
  • 10:$1.2490
  • 1:$1.4000
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.5262
  • 6000:$0.5467
  • 3000:$0.5755
SIRC18DP-T1-GE3
DISTI # 30209835		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode4407
  • 15000:$0.5362
  • 6000:$0.5393
  • 3000:$0.5423
  • 1000:$0.5453
  • 500:$0.7157
  • 250:$0.8333
  • 100:$0.8607
  • 50:$0.9001
  • 25:$1.0001
  • 12:$1.1112
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC18DP-T1-GE3)
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5009
  • 30000:$0.5149
  • 18000:$0.5299
  • 12000:$0.5519
  • 6000:$0.5689
SIRC18DP-T1-GE3
DISTI # 59AC7428		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.4980
  • 6000:$0.5090
  • 4000:$0.5290
  • 2000:$0.5880
  • 1000:$0.6460
  • 1:$0.6740
SIRC18DP-T1-GE3
DISTI # 78-SIRC18DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		8359
  • 1:$1.3600
  • 10:$1.1200
  • 100:$0.8650
  • 500:$0.7430
  • 1000:$0.5870
  • 3000:$0.5480
  • 6000:$0.5200
  • 9000:$0.5010
SIRC18DP-T1-GE3
DISTI # 2846632		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO
RoHS: Compliant		48
  • 1000:$0.9580
  • 500:$1.2200
  • 100:$1.4700
  • 5:$1.8900
SIRC18DP-T1-GE3
DISTI # 2846632		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO48
  • 500:£0.5680
  • 250:£0.6150
  • 100:£0.6610
  • 10:£0.9100
  • 1:£1.1900
Bild Teil # Beschreibung
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR

 Gate Drivers Single Driver
SIRA80DP-T1-RE3

Mfr.#: SIRA80DP-T1-RE3

OMO.#: OMO-SIRA80DP-T1-RE3

 MOSFET 30V Vds 20/-16V Vgs PowerPAK SO-8
SIR638ADP-T1-RE3

Mfr.#: SIR638ADP-T1-RE3

OMO.#: OMO-SIR638ADP-T1-RE3

 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SI7157DP-T1-GE3

Mfr.#: SI7157DP-T1-GE3

OMO.#: OMO-SI7157DP-T1-GE3

 MOSFET -20V Vds 12V Vgs PowerPAK SO-8
STPSC12065GY-TR

Mfr.#: STPSC12065GY-TR

OMO.#: OMO-STPSC12065GY-TR

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
APV2111V

Mfr.#: APV2111V

OMO.#: OMO-APV2111V

 Photodiode Output Optocouplers Driver 4-pin SSOP Driver 4-pin SSOP
SIRA80DP-T1-RE3

Mfr.#: SIRA80DP-T1-RE3

OMO.#: OMO-SIRA80DP-T1-RE3-VISHAY

 MOSFET N-CHAN 30V POWERPAK SO-8
SI7157DP-T1-GE3

Mfr.#: SI7157DP-T1-GE3

OMO.#: OMO-SI7157DP-T1-GE3-VISHAY

 MOSFET P-CH 20V 60A PPAK SO-8
STPSC12065GY-TR

Mfr.#: STPSC12065GY-TR

OMO.#: OMO-STPSC12065GY-TR-STMICROELECTRONICS

 DIODES AND RECTIFIERS
DSC1121CM1-100.0000T

Mfr.#: DSC1121CM1-100.0000T

OMO.#: OMO-DSC1121CM1-100-0000T-MICROCHIP-TECHNOLOGY

 Oscillator MEMS 100MHz ±50ppm (Stability) 15pF CMOS 55% 2.5V/3.3V Automotive 6-Pin QFN SMD T/R
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von SIRC18DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,36 $
1,36 $
10
1,12 $
11,20 $
100
0,86 $
86,50 $
500
0,74 $
371,50 $
1000
0,59 $
587,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top