GS66508P-E05-MR

GS66508P-E05-MR
Mfr. #:
GS66508P-E05-MR
Hersteller:
GaN Systems
Beschreibung:
MOSFET 650V 30A E-Mode GaN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS66508P-E05-MR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS66508P-E05-MR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
GaN-Systeme
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Montageart
SMD/SMT
Technologie
GaN
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
10 V
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Widerstand
55 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
6.5 nC
Kanal-Modus
Erweiterung
Tags
GS66508P, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Teil # Mfg. Beschreibung Aktie Preis
GS66508P-E05-MR
DISTI # 499-GS66508P-E05-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
0
  • 1:$23.4600
  • 10:$22.7000
  • 25:$21.6500
  • 250:$20.1100
Bild Teil # Beschreibung
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB

Mfr.#: GS66508B-EVBDB

OMO.#: OMO-GS66508B-EVBDB-1190

Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508T-E02

Mfr.#: GS66508T-E02

OMO.#: OMO-GS66508T-E02-1190

Neu und Original
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY

Mfr.#: GS66508P-E05-TY

OMO.#: OMO-GS66508P-E05-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY

Mfr.#: GS66508P-E04-TY

OMO.#: OMO-GS66508P-E04-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY

Mfr.#: GS66508T-E01-TY

OMO.#: OMO-GS66508T-E01-TY-128

MOSFET Top cooled 650V GaN Transisto
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von GS66508P-E05-MR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
30,16 $
30,16 $
10
28,66 $
286,57 $
100
27,15 $
2 714,85 $
500
25,64 $
12 820,15 $
1000
24,13 $
24 132,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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