IXFA14N60P

IXFA14N60P
Mfr. #:
IXFA14N60P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 600V 14A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFA14N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFA14N60P DatasheetIXFA14N60P Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXFA14N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
550 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
4.5 mm
Länge:
9.9 mm
Serie:
IXFA14N60P
Transistortyp:
1 N-Channel
Breite:
9.2 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
26 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
23 ns
Gewichtseinheit:
0.056438 oz
Tags
IXFA14N6, IXFA14, IXFA1, IXFA, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 14A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 600 V 300 W 36 nC Surface Mount Power Mosfet - TO-263
***nell
MOSFET, N, TO-263; Transistor Type:HiPerFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:14A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:D2-PAK; Termination Type:SMD; N-channel Gate Charge:38nC; No. of Pins:3; Power, Pd:300W; Thermal Resistance, Junction to Case A:0.42°C/W; Typ Capacitance Ciss:2300pF; Voltage, Vds Max:600V; Time, trr Max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFA14N60P
DISTI # V36:1790_15876796
Littelfuse IncTrans MOSFET N-CH 600V 14A 3-Pin(2+Tab) D2PAK0
  • 50000:$1.5270
  • 25000:$1.5290
  • 5000:$1.7150
  • 500:$2.0290
  • 50:$2.0810
IXFA14N60P3
DISTI # IXFA14N60P3-ND
IXYS CorporationMOSFET N-CH 600V 14A TO-263AA
Min Qty: 1
Container: Tube
48In Stock
  • 2500:$1.4098
  • 1000:$1.4840
  • 500:$1.7596
  • 100:$2.0670
  • 10:$2.5230
  • 1:$2.8100
IXFA14N60P
DISTI # IXFA14N60P-ND
IXYS CorporationMOSFET N-CH 600V 14A D2-PAK
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.8350
IXFA14N60P
DISTI # 747-IXFA14N60P
IXYS CorporationMOSFET 600V 14A
RoHS: Compliant
166
  • 1:$4.0500
  • 10:$3.6200
  • 25:$3.1500
  • 50:$3.0900
  • 100:$2.9700
  • 250:$2.5400
  • 500:$2.4100
  • 1000:$2.0300
  • 2500:$1.7400
IXFA14N60P-TRL
DISTI # 747-IXFA14N60P-TRL
IXYS CorporationMOSFET IXFA14N60P TRL
RoHS: Compliant
0
  • 800:$2.0300
  • 2400:$1.7400
IXFA14N60P3
DISTI # 747-IXFA14N60P3
IXYS CorporationMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode50
  • 1:$3.4100
  • 10:$3.0500
  • 25:$2.6500
  • 50:$2.6000
  • 100:$2.5000
  • 250:$2.1300
  • 500:$2.0200
  • 1000:$1.7100
  • 2500:$1.4600
IXFA14N60P-TRLIXYS CorporationMOSFET IXFA14N60P TRL
RoHS: Compliant
Americas -
    IXFA14N60PIXYS CorporationMOSFET 600V 14A
    RoHS: Compliant
    Americas -
      IXFA14N60PIXYS Corporation 144
        IXFA14N60P
        DISTI # IXFA14N60P
        IXYS CorporationTransistor: N-MOSFET,600V,14A,300W,TO263100
        • 50:$1.8500
        • 10:$2.0600
        • 3:$2.3400
        • 1:$2.5900
        IXFA14N60P
        DISTI # IXFA14N60P
        IXYS CorporationTransistor: N-MOSFET,600V,14A,300W,TO263100
        • 50:$1.8500
        • 10:$2.0600
        • 3:$2.3300
        • 1:$2.5900
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        Verfügbarkeit
        Aktie:
        166
        Auf Bestellung:
        2149
        Menge eingeben:
        Der aktuelle Preis von IXFA14N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        4,05 $
        4,05 $
        10
        3,62 $
        36,20 $
        25
        3,15 $
        78,75 $
        50
        3,09 $
        154,50 $
        100
        2,97 $
        297,00 $
        250
        2,54 $
        635,00 $
        500
        2,41 $
        1 205,00 $
        1000
        2,03 $
        2 030,00 $
        2500
        1,74 $
        4 350,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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