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SIRA88DP-T1-GE3

SIRA88DP-T1-GE3
Mfr. #:
SIRA88DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 45.5A POWERPAKSO
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIRA88DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SIRA8, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 25, N-Channel MOSFET, 45.5 A, 30 V, 8-Pin SO Vishay SIRA88DP-T1-GE3
***et
Transistor MOSFET N-CH 30V 45.5A 8-Pin PowerPAK SO T/R
***ical
Trans MOSFET N-CH 30V 45.5A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 30V 45.5A POWERPAKSO
***ark
MOSFET, N-CH, 30V, 45.5A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:45.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 45.5A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:45.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:25W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 30V, 45,5A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:45.5A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0054ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Teil # Mfg. Beschreibung Aktie Preis
SIRA88DP-T1-GE3
DISTI # V72:2272_17597361		Vishay IntertechnologiesSIRA88DP-T1-GE31805
  • 75000:$0.1424
  • 30000:$0.1480
  • 15000:$0.1535
  • 6000:$0.1591
  • 3000:$0.1647
  • 1000:$0.1679
  • 500:$0.2190
  • 250:$0.2547
  • 100:$0.2829
  • 50:$0.3083
  • 25:$0.3768
  • 10:$0.4186
  • 1:$0.5410
SIRA88DP-T1-GE3
DISTI # SIRA88DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 45.5A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2385In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SIRA88DP-T1-GE3
DISTI # SIRA88DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 45.5A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2385In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SIRA88DP-T1-GE3
DISTI # SIRA88DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 45.5A POWERPAKSO
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1434
  • 15000:$0.1512
  • 6000:$0.1625
  • 3000:$0.1736
SIRA88DP-T1-GE3
DISTI # 25817688		Vishay IntertechnologiesSIRA88DP-T1-GE31805
  • 30000:$0.1480
  • 15000:$0.1535
  • 6000:$0.1591
  • 3000:$0.1647
  • 1000:$0.1679
  • 500:$0.2190
  • 250:$0.2547
  • 100:$0.2829
  • 50:$0.3083
  • 47:$0.3768
SIRA88DP-T1-GE3
DISTI # SIRA88DP-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 30V 45.5A 8-Pin PowerPAK SO T/R (Alt: SIRA88DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SIRA88DP-T1-GE3
    DISTI # SIRA88DP-T1-GE3    		Vishay IntertechnologiesMOSFET N-Channel 30V 45.5A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SIRA88DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.1359
    • 30000:$0.1399
    • 18000:$0.1439
    • 12000:$0.1499
    • 6000:$0.1549
    SIRA88DP-T1-GE3
    DISTI # SIRA88DP-T1-GE3    		Vishay IntertechnologiesMOSFET N-Channel 30V 45.5A 8-Pin PowerPAK T/R (Alt: SIRA88DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1529
    • 18000:€0.1639
    • 12000:€0.1769
    • 6000:€0.2059
    • 3000:€0.3029
    SIRA88DP-T1-GE3
    DISTI # 78-SIRA88DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		6446
    • 1:$0.5000
    • 10:$0.3850
    • 100:$0.2850
    • 500:$0.2340
    • 1000:$0.1810
    • 3000:$0.1650
    • 6000:$0.1540
    • 9000:$0.1440
    SIRA88DP-T1-GE3Vishay Intertechnologies 6000
      SIRA88DP-T1-GE3
      DISTI # 2729843      		Vishay IntertechnologiesMOSFET, N-CH, 30V, 45.5A, POWERPAK SO0
      • 500:£0.1720
      • 250:£0.1910
      • 100:£0.2090
      • 25:£0.3040
      • 5:£0.3200
      SIRA88DP-T1-GE3
      DISTI # 2729843      		Vishay IntertechnologiesMOSFET, N-CH, 30V, 45.5A, POWERPAK SO
      RoHS: Compliant      		0
      • 1000:$0.2960
      • 500:$0.3830
      • 100:$0.4870
      • 10:$0.6530
      • 1:$0.7700
      Bild Teil # Beschreibung
      SIRA88DP-T1-GE3

      Mfr.#: SIRA88DP-T1-GE3

      OMO.#: OMO-SIRA88DP-T1-GE3

      		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
      SIRA88DP-T1-GE3

      Mfr.#: SIRA88DP-T1-GE3

      OMO.#: OMO-SIRA88DP-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 45.5A POWERPAKSO
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von SIRA88DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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