SI3475DV-T1-E3

SI3475DV-T1-E3
Mfr. #:
SI3475DV-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 200V 0.95A 3.2W 1.61ohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3475DV-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3475DV-T1-E3 DatasheetSI3475DV-T1-E3 Datasheet (P4-P6)SI3475DV-T1-E3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSOP-6
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI3
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI3475DV-E3
Gewichtseinheit:
0.000705 oz
Tags
SI347, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET P-CH 200V 0.95A 6-TSOP
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-950mA; On Resistance, Rds(on):1.65ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4V ;RoHS Compliant: Yes
***nell
MOSFET, P, TSOP; Transistor Type:TrenchFET; Transistor Polarity:P; Voltage, Vds Typ:-200V; Current, Id Cont:0.75A; Resistance, Rds On:1.37ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TSOP; Termination Type:SMD; Base Number:3475; Current, Idm Pulse:3A; No. of Pins:6; P Channel Gate Charge:8nC; Power Dissipation:-3mW; Power, Pd:2W; Voltage, Vds Max:200V; Max Output Current:2A
Teil # Mfg. Beschreibung Aktie Preis
SI3475DV-T1-E3
DISTI # SI3475DV-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 200V 0.95A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI3475DV-T1-E3
    DISTI # SI3475DV-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 200V 0.95A 6-TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI3475DV-T1-E3
      DISTI # SI3475DV-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 200V 0.95A 6-TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI3475DV-T1-E3
        DISTI # 781-SI3475DV-T1-E3
        Vishay IntertechnologiesMOSFET 200V 0.95A 3.2W 1.61ohm @ 10V
        RoHS: Compliant
        0
          Bild Teil # Beschreibung
          SI3475DV-T1-GE3

          Mfr.#: SI3475DV-T1-GE3

          OMO.#: OMO-SI3475DV-T1-GE3

          MOSFET RECOMMENDED ALT 781-SI3437DV-GE3
          SI3475DV-T1-E3

          Mfr.#: SI3475DV-T1-E3

          OMO.#: OMO-SI3475DV-T1-E3

          MOSFET 200V 0.95A 3.2W 1.61ohm @ 10V
          SI3475DV-T1-E3

          Mfr.#: SI3475DV-T1-E3

          OMO.#: OMO-SI3475DV-T1-E3-VISHAY

          MOSFET P-CH 200V 0.95A 6-TSOP
          SI3475DV-T1-GE3

          Mfr.#: SI3475DV-T1-GE3

          OMO.#: OMO-SI3475DV-T1-GE3-VISHAY

          MOSFET P-CH 200V 0.95A 6-TSOP
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von SI3475DV-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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