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IPS80R2K4P7AKMA1

IPS80R2K4P7AKMA1
Mfr. #:
IPS80R2K4P7AKMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 800V 2.5A TO251-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPS80R2K4P7AKMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPS80R2K4P7AKMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPS80R, IPS80, IPS8, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2.4 Ohm 8 nC CoolMOS™ Power Mosfet - TO-251
***i-Key
MOSFET N-CH 800V 2.5A TO251-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 2.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 2.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:22W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 2,5A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:22W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Teil # Mfg. Beschreibung Aktie Preis
IPS80R2K4P7AKMA1
DISTI # IPS80R2K4P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 800V 2.5A TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1490In Stock
  • 6000:$0.3209
  • 3000:$0.3447
  • 1500:$0.3804
  • 100:$0.6014
  • 25:$0.7368
  • 10:$0.7840
  • 1:$0.8900
IPS80R2K4P7AKMA1
DISTI # IPS80R2K4P7AKMA1		Infineon Technologies AGLOW POWER_NEW - Bulk (Alt: IPS80R2K4P7AKMA1)
Min Qty: 1191
Container: Bulk		Americas - 0
  • 11910:$0.2659
  • 5955:$0.2709
  • 3573:$0.2809
  • 2382:$0.2909
  • 1191:$0.3019
IPS80R2K4P7AKMA1
DISTI # IPS80R2K4P7AKMA1		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPS80R2K4P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.2869
  • 9000:$0.2919
  • 6000:$0.3029
  • 3000:$0.3139
  • 1500:$0.3259
IPS80R2K4P7AKMA1
DISTI # 24AC9056		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes202
  • 1000:$0.3670
  • 500:$0.4120
  • 100:$0.4580
  • 10:$0.7090
  • 1:$0.8480
IPS80R2K4P7AKMA1
DISTI # 726-IPS80R2K4P7AKMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		250
  • 1:$0.8400
  • 10:$0.7020
  • 100:$0.4530
  • 1000:$0.3630
IPS80R2K4P7AKMA1Infineon Technologies AGInfineon CoolMOS™ N-Channel Power MOSFETIPS80R2K4P7 - TO251
RoHS: Compliant		1500
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
IPS80R2K4P7AKMA1
DISTI # 2771334		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-251212
  • 500:£0.3060
  • 250:£0.3290
  • 100:£0.3530
  • 25:£0.5560
  • 5:£0.6140
IPS80R2K4P7AKMA1
DISTI # 2771334		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-251
RoHS: Compliant		202
  • 1000:$0.6090
  • 500:$0.7610
  • 100:$1.0400
  • 10:$1.3400
  • 1:$1.5300
Bild Teil # Beschreibung
IPS80R2K0P7AKMA1

Mfr.#: IPS80R2K0P7AKMA1

OMO.#: OMO-IPS80R2K0P7AKMA1

 MOSFET
IPS80R2K4P7AKMA1

Mfr.#: IPS80R2K4P7AKMA1

OMO.#: OMO-IPS80R2K4P7AKMA1

 MOSFET
IPS80R2K4P7AKMA1

Mfr.#: IPS80R2K4P7AKMA1

OMO.#: OMO-IPS80R2K4P7AKMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 2.5A TO251-3
IPS80R2K0P7AKMA1

Mfr.#: IPS80R2K0P7AKMA1

OMO.#: OMO-IPS80R2K0P7AKMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 3A TO251-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPS80R2K4P7AKMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,40 $
0,40 $
10
0,38 $
3,79 $
100
0,36 $
35,90 $
500
0,34 $
169,50 $
1000
0,32 $
319,10 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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