SIR826DP-T1-GE3

SIR826DP-T1-GE3
Mfr. #:
SIR826DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR826DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR826DP-T1-GE3 DatasheetSIR826DP-T1-GE3 Datasheet (P4-P6)SIR826DP-T1-GE3 Datasheet (P7-P9)SIR826DP-T1-GE3 Datasheet (P10-P12)SIR826DP-T1-GE3 Datasheet (P13)
ECAD Model:
Mehr Informationen:
SIR826DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
4.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
60 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
104 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
HERR
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
80 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
36 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
SIR826DP-GE3
Gewichtseinheit:
0.017870 oz
Tags
SIR826D, SIR826, SIR82, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR826DP Series 80 V 4.8 mOhm 60 nC SMT N-Channel MOSFET - POWERPAK-SO-8
***ical
Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 80V 60A PPAK SO-8
***
N-CHANNEL 80-V (D-S)
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:104W; No. Of Pins:8Pins Rohs Compliant: Yes
***nell
MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***ment14 APAC
MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIR826DP-T1-GE3
DISTI # V72:2272_09216024
Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R
RoHS: Compliant
0
    SIR826DP-T1-GE3
    DISTI # V36:1790_09216024
    Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R
    RoHS: Compliant
    0
    • 3000000:$1.5540
    • 1500000:$1.5550
    • 300000:$1.5810
    • 30000:$1.6110
    • 3000:$1.6160
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    5990In Stock
    • 1000:$1.4898
    • 500:$1.7980
    • 100:$2.1884
    • 10:$2.7230
    • 1:$3.0300
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    5990In Stock
    • 1000:$1.4898
    • 500:$1.7980
    • 100:$2.1884
    • 10:$2.7230
    • 1:$3.0300
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    3000In Stock
    • 6000:$1.2968
    • 3000:$1.3466
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR826DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$1.2180
    • 18000:$1.2516
    • 12000:$1.2873
    • 6000:$1.3418
    • 3000:$1.3828
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R (Alt: SIR826DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€1.0289
    • 18000:€1.0879
    • 12000:€1.2249
    • 6000:€1.4859
    • 3000:€2.1209
    SIR826DP-T1-GE3
    DISTI # 94T2658
    Vishay IntertechnologiesMOSFET, N CH, 80V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
    • 1000:$1.7700
    • 500:$2.0600
    • 250:$2.3600
    • 100:$2.6500
    • 50:$2.9300
    • 25:$3.1700
    • 1:$3.3300
    SIR826DP-T1-GE3.
    DISTI # 15AC4249
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:104W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 30000:$1.2200
    • 18000:$1.2600
    • 12000:$1.2900
    • 6000:$1.3500
    • 1:$1.3900
    SIR826DP-T1-GE3
    DISTI # 78-SIR826DP-T1-GE3
    Vishay IntertechnologiesMOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
    RoHS: Compliant
    7407
    • 1:$2.9500
    • 10:$2.4500
    • 100:$1.9000
    • 500:$1.6600
    • 1000:$1.3700
    • 3000:$1.2800
    SIR826DP-T1-GE3Vishay IntertechnologiesMOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FETAmericas - 3000
    • 3000:$1.3080
    • 6000:$1.2650
    • 12000:$1.2020
    • 24000:$1.1650
    SIR826DP-T1-GE3.Vishay IntertechnologiesMOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
    RoHS: Compliant
    Americas - 3000
    • 10:$2.2050
    • 100:$1.7110
    • 250:$1.6020
    • 500:$1.4940
    • 1000:$1.4580
    Bild Teil # Beschreibung
    INA226AIDGSR

    Mfr.#: INA226AIDGSR

    OMO.#: OMO-INA226AIDGSR

    Current & Power Monitors & Regulators Hi-Side Msmt,Bi-Dir Current/Pwr Mon
    1N4148W-7-F

    Mfr.#: 1N4148W-7-F

    OMO.#: OMO-1N4148W-7-F

    Diodes - General Purpose, Power, Switching SURFACE MOUNT FAST SWITCHING DIODE
    SI7469DP-T1-E3

    Mfr.#: SI7469DP-T1-E3

    OMO.#: OMO-SI7469DP-T1-E3

    MOSFET -80V Vds 20V Vgs PowerPAK SO-8
    LT8641EUDC#PBF

    Mfr.#: LT8641EUDC#PBF

    OMO.#: OMO-LT8641EUDC-PBF

    Switching Voltage Regulators 65V, 3.5A Synchronous Step-Down Silent Switcher with 2.5 A Quiescent Current
    ERA-3AEB104V

    Mfr.#: ERA-3AEB104V

    OMO.#: OMO-ERA-3AEB104V

    Thin Film Resistors - SMD 0603 1/10W 100Kohms
    ERA-3AEB104V

    Mfr.#: ERA-3AEB104V

    OMO.#: OMO-ERA-3AEB104V-PANASONIC

    Thin Film Resistors - SMD 0603 1/10W 100Kohms
    INA226AIDGSR

    Mfr.#: INA226AIDGSR

    OMO.#: OMO-INA226AIDGSR-TEXAS-INSTRUMENTS

    Current & Power Monitors & Regulators Hi-Side Msmt,Bi-Dir Current/Pwr Mon
    45985-4413

    Mfr.#: 45985-4413

    OMO.#: OMO-45985-4413-673

    Heavy Duty Power Connectors LPH Plug Assy RtAn 0 4 Pwr 12 Sig P and G
    SI7469DP-T1-E3

    Mfr.#: SI7469DP-T1-E3

    OMO.#: OMO-SI7469DP-T1-E3-VISHAY

    MOSFET P-CH 80V 28A PPAK SO-8
    CGA2B3X7R1H104K050BB

    Mfr.#: CGA2B3X7R1H104K050BB

    OMO.#: OMO-CGA2B3X7R1H104K050BB-TDK

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.1uF 50volts X7R +/-10%
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1991
    Menge eingeben:
    Der aktuelle Preis von SIR826DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,95 $
    2,95 $
    10
    2,45 $
    24,50 $
    100
    1,90 $
    190,00 $
    500
    1,66 $
    830,00 $
    1000
    1,37 $
    1 370,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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