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SIZ920DT-T1-GE3

SIZ920DT-T1-GE3
Mfr. #:
SIZ920DT-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 30V 40A 100W 7.1mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ920DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIZ920DT-GE3
Montageart
SMD/SMT
Paket-Koffer
6-PowerPair
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
6-PowerPair
Aufbau
Dual
FET-Typ
2 N-Channel (Half Bridge)
Leistung max
39W, 100W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
1260pF @ 15V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
40A
Rds-On-Max-Id-Vgs
7.1 mOhm @ 18.9A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Lade-Qg-Vgs
35nC @ 10V
Pd-Verlustleistung
100 W
ID-Dauer-Drain-Strom
40 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
7.1 mOhms
Transistor-Polarität
N-Kanal
Kanal-Modus
Erweiterung
Tags
SIZ920D, SIZ920, SIZ92, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R
***ark
MOSFET, N-CH, DUAL, 30V, PP 5X6
***nell
MOSFET, N-CH, DUAL, 30V, PP 5X6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:100W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAIR; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SIZ920DT-T1-GE3
DISTI # SIZ920DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIZ920DT-T1-GE3
    DISTI # SIZ920DT-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIZ920DT-T1-GE3
      DISTI # SIZ920DT-T1-GE3DKR-ND      		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIZ920DT-T1-GE3
        DISTI # SIZ920DT-T1-GE3        		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ920DT-T1-GE3)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 27000
          SIZ920DT-T1-GE3
          DISTI # 78-SIZ920DT-T1-GE3          		Vishay IntertechnologiesMOSFET 30V 40A 100W 7.1mohm @ 10V
          RoHS: Compliant          		0
            SIZ920DTT1GE3Vishay Intertechnologies 
            RoHS: Compliant            		Europe - 3000
              SIZ920DT-T1-GE3
              DISTI # 2283688              		Vishay IntertechnologiesMOSFET, N-CH, DUAL, 30V, PP 5X6
              RoHS: Compliant              		90
              • 5:£1.1200
              • 25:£1.0200
              • 100:£0.7850
              • 250:£0.7340
              • 500:£0.6840
              SIZ920DT-T1-GE3
              DISTI # 2283688              		Vishay IntertechnologiesMOSFET, N-CH, DUAL, 30V, PP 5X6
              RoHS: Compliant              		0
              • 1:$3.6500
              • 10:$3.0200
              • 100:$2.3700
              • 500:$1.9500
              Bild Teil # Beschreibung
              SIZ920DT-T1-GE3

              Mfr.#: SIZ920DT-T1-GE3

              OMO.#: OMO-SIZ920DT-T1-GE3

              		 MOSFET RECOMMENDED ALT 78-SIZ998DT-T1-GE3
              SIZ920DT-T1-GE3

              Mfr.#: SIZ920DT-T1-GE3

              OMO.#: OMO-SIZ920DT-T1-GE3-VISHAY

              		 RF Bipolar Transistors MOSFET 30V 40A 100W 7.1mohm @ 10V
              SIZ920DT

              Mfr.#: SIZ920DT

              OMO.#: OMO-SIZ920DT-1190

              		 Neu und Original
              SIZ920DTT1GE3

              Mfr.#: SIZ920DTT1GE3

              OMO.#: OMO-SIZ920DTT1GE3-1190

              		 Power Field-Effect Transistor, 40A I(D), 30V, 0.0071ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1500
              Menge eingeben:
              Der aktuelle Preis von SIZ920DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
              Referenzpreis (USD)
              Menge
              Stückpreis
              ext. Preis
              1
              2,50 $
              2,50 $
              10
              2,38 $
              23,80 $
              100
              2,25 $
              225,45 $
              500
              2,13 $
              1 064,65 $
              1000
              2,00 $
              2 004,00 $
              Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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