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IRF6708S2TR1PBF

IRF6708S2TR1PBF
Mfr. #:
IRF6708S2TR1PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 13A DIRECTFET-LV
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6708S2TR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRF670, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 13A 6-Pin Direct-FET S1 T/R
***ied Electronics & Automation
MOSFET N-Ch 30V 13A HEXFET Direct-FET S1
***ment14 APAC
MOSFET, N CH, 30V, 13A, DIRECTFET LV
***i-Key
MOSFET N-CH 30V 13A DIRECTFET-LV
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:20W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Pulse Current Idm:110A; Voltage Vgs th Min:1.35V
Teil # Mfg. Beschreibung Aktie Preis
IRF6708S2TR1PBF
DISTI # IRF6708S2TR1PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 13A DIRECTFET-LV
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6708S2TR1PBF
    DISTI # 942-IRF6708S2TR1PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET DIRECTFET S1
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      IRF6708S2TR1PBF

      Mfr.#: IRF6708S2TR1PBF

      OMO.#: OMO-IRF6708S2TR1PBF

      		 MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
      IRF6708S2TRPBF

      Mfr.#: IRF6708S2TRPBF

      OMO.#: OMO-IRF6708S2TRPBF

      		 MOSFET
      IRF6708S2TR1PBF

      Mfr.#: IRF6708S2TR1PBF

      OMO.#: OMO-IRF6708S2TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A DIRECTFET-LV
      IRF6708S2TRPBF

      Mfr.#: IRF6708S2TRPBF

      OMO.#: OMO-IRF6708S2TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A DIRECTFET-LV
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von IRF6708S2TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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