OMO ElectronicOMO Electronic
Expand menu
0 Wagen

2N5401G

2N5401G
Mfr. #:
2N5401G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 500mA 160V PNP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N5401G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5401G Datasheet2N5401G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Polarität des Transistors:
PNP
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
150 V
Kollektor- Basisspannung VCBO:
160 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
0.5 V
Maximaler DC-Kollektorstrom:
0.6 A
Bandbreitenprodukt fT gewinnen:
300 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N5401
Höhe:
5.33 mm
Länge:
5.2 mm
Verpackung:
Schüttgut
Breite:
4.19 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
0.6 A
DC-Kollektor/Basisverstärkung hfe Min:
50
Pd - Verlustleistung:
625 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
5000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.070548 oz
Tags
2N5401G, 2N5401, 2N540, 2N54, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
High Current PNP Bipolar Transistor, TO-92 150 V, 0.1 A
***ied Electronics & Automation
Transistor, Bipolar,Si,PNP,Amplifier,VCEO 150VDC,IC 600mA,PD 1.5W,TO-92,hFE 50
***r Electronics
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
***el Electronic
ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92
***ponent Stockers
600 mA 150 V PNP Si SMALL SIGNAL TRANSISTOR TO-92
***ark
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:150V; Collector Emitter Saturation Voltage, Vce(sat):60V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):60; Package/Case:TO-92 ;RoHS Compliant: Yes
***nell
TRANSISTOR, PNP, 150V, 0.6A, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 50; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
2N5401G
DISTI # 2N5401GOS-ND		ON SemiconductorTRANS PNP 150V 0.6A TO-92
RoHS: Compliant
Min Qty: 5000
Container: Bulk		Limited Supply - Call
    2N5401G
    DISTI # 70099759    		ON SemiconductorSS T092 GP XSTR PNP 150V -LEAD FREE
    RoHS: Compliant    		0
    • 25:$0.1100
    2N5401
    DISTI # 863-2N5401    		ON SemiconductorBipolar Transistors - BJT 500mA 160V PNP
    RoHS: Not compliant    		0
      2N5401G
      DISTI # 863-2N5401G      		ON SemiconductorBipolar Transistors - BJT 500mA 160V PNP
      RoHS: Compliant      		0
        2N5401GON Semiconductor 
        RoHS: Not Compliant        		13644
        • 500:$0.0900
        • 1000:$0.0900
        • 25:$0.1000
        • 100:$0.1000
        • 1:$0.1100
        2N5401GON Semiconductor 
        RoHS: Compliant        		Europe - 539
          Bild Teil # Beschreibung
          2N5020

          Mfr.#: 2N5020

          OMO.#: OMO-2N5020

          		 JFET JFET P-Channel -50V 50mA 500mW 4mW
          2N5087TFR

          Mfr.#: 2N5087TFR

          OMO.#: OMO-2N5087TFR-ON-SEMICONDUCTOR

          		 TRANS PNP 50V 0.1A TO-92
          2N5089TF

          Mfr.#: 2N5089TF

          OMO.#: OMO-2N5089TF-ON-SEMICONDUCTOR

          		 TRANS NPN 25V 0.1A TO-92
          2N5401 2L

          Mfr.#: 2N5401 2L

          OMO.#: OMO-2N5401-2L-1190

          		 Neu und Original
          2N5631G.

          Mfr.#: 2N5631G.

          OMO.#: OMO-2N5631G--1190

          		 Neu und Original
          2N5671

          Mfr.#: 2N5671

          OMO.#: OMO-2N5671-MICROSEMI

          		 NPN TRANSISTOR
          2N5840

          Mfr.#: 2N5840

          OMO.#: OMO-2N5840-MICROSEMI

          		 NPN TRANSISTOR
          2N5875G

          Mfr.#: 2N5875G

          OMO.#: OMO-2N5875G-1190

          		 Neu und Original
          2N5953

          Mfr.#: 2N5953

          OMO.#: OMO-2N5953-ON-SEMICONDUCTOR

          		 JFET N-CH 30V 5MA TO92
          2N5973

          Mfr.#: 2N5973

          OMO.#: OMO-2N5973-1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2500
          Menge eingeben:
          Der aktuelle Preis von 2N5401G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Beginnen mit
          Top