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IXYH100N65C3

IXYH100N65C3
Mfr. #:
IXYH100N65C3
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/200A XPT C3-Class TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYH100N65C3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXYH100N65C3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
GenX3, XPT
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Handelsname
XPT
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247 (IXYH)
Aufbau
Single
Leistung max
830W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
200A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
420A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 70A
Schaltenergie
2.15mJ (on), 840μJ (off)
Gate-Gebühr
164nC
Td-ein-aus-25°C
28ns/106ns
Testbedingung
400V, 50A, 3 Ohm, 15V
Pd-Verlustleistung
830 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.85 V
Kontinuierlicher Kollektorstrom-bei-25-C
200 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
30 V
Kontinuierlicher Kollektor-Strom-Ic-Max
200 A
Tags
IXYH10, IXYH1, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 200A
***i-Key
IGBT 650V 200A 830W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXYH100N65C3
DISTI # V36:1790_07768386		Littelfuse IncTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD0
  • 30000:$4.0970
  • 15000:$4.1000
  • 3000:$4.4990
  • 300:$5.2560
  • 30:$5.3860
IXYH100N65C3
DISTI # IXYH100N65C3-ND		IXYS CorporationIGBT 650V 200A 830W TO247
Min Qty: 1
Container: Tube		316In Stock
  • 1000:$4.7912
  • 500:$5.5010
  • 250:$6.0333
  • 100:$6.3172
  • 25:$7.2756
  • 10:$7.6300
  • 1:$8.4500
IXYH100N65C3
DISTI # 747-IXYH100N65C3		IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		66
  • 1:$8.8700
  • 10:$7.9800
  • 25:$7.2700
  • 50:$6.6500
  • 100:$6.5600
  • 250:$5.9800
  • 500:$5.5000
  • 1000:$4.7900
IXYH100N65C3IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		Americas -
    IXYH100N65C3
    DISTI # IXYH100N65C3    		IXYS Corporation650V 200A 830W TO247AD
    RoHS: Compliant    		28
    • 1:€8.3900
    • 5:€5.3900
    • 30:€4.3900
    • 60:€4.2300
    Bild Teil # Beschreibung
    IXYH10N170C

    Mfr.#: IXYH10N170C

    OMO.#: OMO-IXYH10N170C

    		 Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
    IXYH100N65A3

    Mfr.#: IXYH100N65A3

    OMO.#: OMO-IXYH100N65A3

    		 Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-247AD
    IXYH10N170CV1

    Mfr.#: IXYH10N170CV1

    OMO.#: OMO-IXYH10N170CV1

    		 IGBT Transistors 1700V/10A XPT IGBT w/ Diode
    IXyH100N65C3

    Mfr.#: IXyH100N65C3

    OMO.#: OMO-IXYH100N65C3

    		 IGBT Transistors 650V/200A XPT C3-Class TO-247
    IXYH10N170C

    Mfr.#: IXYH10N170C

    OMO.#: OMO-IXYH10N170C-IXYS-CORPORATION

    		 IGBT 1.7KV 36A TO247
    IXYH10N450CHV

    Mfr.#: IXYH10N450CHV

    OMO.#: OMO-IXYH10N450CHV-1190

    		 Neu und Original
    IXYH100N65A3

    Mfr.#: IXYH100N65A3

    OMO.#: OMO-IXYH100N65A3-IXYS-CORPORATION

    		 IGBT
    IXYH10N170CV1

    Mfr.#: IXYH10N170CV1

    OMO.#: OMO-IXYH10N170CV1-IXYS-CORPORATION

    		 IGBT 1.7KV 36A TO247
    IXYH100N65C3

    Mfr.#: IXYH100N65C3

    OMO.#: OMO-IXYH100N65C3-IXYS-CORPORATION

    		 IGBT Transistors 650V/200A XPT C3-Class TO-247
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IXYH100N65C3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    7,18 $
    7,18 $
    10
    6,83 $
    68,26 $
    100
    6,47 $
    646,65 $
    500
    6,11 $
    3 053,65 $
    1000
    5,75 $
    5 748,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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