FDS8947A

Mfr. #:: FDS8947A
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET 2P-CH 30V 4A 8SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDS8947A Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FDS8947A Datasheet FDS8947A Datasheet (P4-P5)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: FETs - Arrays

Serie: -

Verpackung: Band & Spule (TR)

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Lieferanten-Geräte-Paket: 8-SO

FET-Typ: 2 P-Channel (Dual)

Leistung max: 900mW

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 730pF @ 15V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 52 mOhm @ 4A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Lade-Qg-Vgs: 27nC @ 10V

Tags: FDS8947, FDS894, FDS89, FDS8, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS8947A Beschreibung

***inecomponents.com: Dual P-Channel Enhancement Mode Field Effect Transistor

***i-Key: MOSFET 2P-CH 30V 4A 8SOIC

***Yang: 30V DUAL P-CH. FET, 52 MO, SO8 - Bulk

***or: P-CHANNEL POWER MOSFET

***ser: MOSFETs SO-8 DUAL P-CH -30V

***(Formerly Allied Electronics): IRF7303PBF Dual N-channel MOSFET Transistor; 4.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube

***klin Elektronik: INFINEON SMD MOSFET NFET 30V 4,9A 0,05Ω 150°C SO-8 IRF7303TRPBF

***fin: Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8

***roFlash: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po

***ark: Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

***ical: Trans MOSFET N-CH 30V 5A 8-Pin SOIC T/R

***S: French Electronic Distributor since 1988

***inecomponents.com: RECOMMEND REPLACEMENT PART: FDS6930A

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***el Electronic: Res Thick Film 0603 20K Ohm 1% 0.1W(1/10W) ±100ppm/C Pad SMD Automotive T/R

***et: TRANS MOSFET N-CH 30V 5A 8SOIC

***DA Technology Co., Ltd.: Product Description Demo for Development.

***rchild Semiconductor: These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***et: Transistor MOSFET Array Dual P-Channel 30V 4.9A 8-Pin SOIC

***ure Electronics: Dual P-Channel 30 V 0.058 Ohm 23 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes

***ical: Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:-30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-5A ;RoHS Compliant: Yes

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

***nell: MOSFET, DUAL, P, SMD, 8-SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -5A; Current Id Max: -5A; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.046ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -1.7V; Voltage Vgs Rds on Measurement: -10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDS8947A DISTI # FDS8947A-ND	ON Semiconductor	MOSFET 2P-CH 30V 4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS8947A	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1954	1000:$1.9000 500:$1.9900 100:$2.0800 25:$2.1700 1:$2.3300
FDS8947A DISTI # 512-FDS8947A	ON Semiconductor	MOSFET SO-8 DUAL P-CH -30V RoHS: Compliant	0
FDS8947A	Fairchild Semiconductor Corporation	4 A, 30 V, 0.052 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET	131	84:$2.0800 9:$2.4000 1:$4.8000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDS8958A OMO.#: OMO-FDS8958A	MOSFET SO8 COMP N-P-CH T/R
	Mfr.#: FDS8978 OMO.#: OMO-FDS8978	MOSFET 30V N-Channel PowerTrench MOSFET
	Mfr.#: FDS8870 OMO.#: OMO-FDS8870	MOSFET 30V N-Ch PowerTrench MOSFET
	Mfr.#: FDS86106 OMO.#: OMO-FDS86106-ON-SEMICONDUCTOR	MOSFET N-CH 100V 3.4A 8-SOIC
	Mfr.#: FDS8333 OMO.#: OMO-FDS8333-1190	Neu und Original
	Mfr.#: FDS840P OMO.#: OMO-FDS840P-1190	Neu und Original
	Mfr.#: FDS86540-NL OMO.#: OMO-FDS86540-NL-1190	Neu und Original
	Mfr.#: FDS8670-NL OMO.#: OMO-FDS8670-NL-1190	Neu und Original
	Mfr.#: FDS8928 OMO.#: OMO-FDS8928-1190	Neu und Original
	Mfr.#: FDS8974 OMO.#: OMO-FDS8974-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von FDS8947A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,85 $~~; ~~2,85 $~~

10: ~~2,71 $~~; ~~27,08 $~~

100: ~~2,56 $~~; ~~256,50 $~~

500: ~~2,42 $~~; ~~1 211,25 $~~

1000: ~~2,28 $~~; ~~2 280,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDS8947 4
FDS894 10
FDS89 82
FDS8 224
FDS 1298

FDS8947A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes