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FGA120N30DTU

FGA120N30DTU
Mfr. #:
FGA120N30DTU
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 300V 120A 290W TO3P
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA120N30DTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FGA12, FGA1, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 300V 120A 290W TO3P
***ark
IGBT, PDP, 300V, TO-3P; Transistor type:IGBT; Voltage, Vces:300V; Current, Ic continuous a max:120A; Voltage, Vce sat max:1.4V; Power dissipation:290W; Package/Case:TO-3P; Current, Ic @ Vce sat:25A; Current, Icm pulsed:300A; Pin RoHS Compliant: Yes
***nell
IGBT, PDP, 300V, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 300V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic @ Vce Sat: 25A; Current Ic Continuous a Max: 120A; Current Temperature: 25°C; Fall Time tf: 130ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Junction to Case Thermal Resistance A: 0.43°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: With flywheel diode; Power Dissipation Max: 290W; Pulsed Current Icm: 300A; Rise Time: 270ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 300V
Teil # Mfg. Beschreibung Aktie Preis
FGA120N30DTU
DISTI # FGA120N30DTU-ND		ON SemiconductorIGBT 300V 120A 290W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FGA120N30DTU
    DISTI # 512-FGA120N30DTU    		ON SemiconductorIGBT Transistors 300V PDP IGBT
    RoHS: Compliant    		0
      FGA120N30DTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel
      RoHS: Compliant      		364
      • 1000:$1.3800
      • 500:$1.4500
      • 100:$1.5100
      • 25:$1.5800
      • 1:$1.7000
      Bild Teil # Beschreibung
      FGA120N30D

      Mfr.#: FGA120N30D

      OMO.#: OMO-FGA120N30D-1190

      		 Neu und Original
      FGA120N30DTU

      Mfr.#: FGA120N30DTU

      OMO.#: OMO-FGA120N30DTU-ON-SEMICONDUCTOR

      		 IGBT 300V 120A 290W TO3P
      FGA120N33D

      Mfr.#: FGA120N33D

      OMO.#: OMO-FGA120N33D-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von FGA120N30DTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,07 $
      2,07 $
      10
      1,97 $
      19,66 $
      100
      1,86 $
      186,30 $
      500
      1,76 $
      879,75 $
      1000
      1,66 $
      1 656,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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