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FQA9N90-F109

FQA9N90-F109
Mfr. #:
FQA9N90-F109
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 900V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQA9N90-F109 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3PN-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
900 V
Id - Kontinuierlicher Drainstrom:
8.6 A
Rds On - Drain-Source-Widerstand:
1.3 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
240 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
20.1 mm
Länge:
16.2 mm
Serie:
FQA9N90_F109
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
80 ns
Produktart:
MOSFET
Anstiegszeit:
100 ns
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
135 ns
Typische Einschaltverzögerungszeit:
45 ns
Teil # Aliase:
FQA9N90_F109
Gewichtseinheit:
0.225789 oz
Tags
FQA9N90-F, FQA9N9, FQA9N, FQA9, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, QFET®, 900V, 8.6A, 1.3Ω, TO-3P
***et
Trans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Rail
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQA9N90-F109
DISTI # 27011439		ON Semiconductor900V, 8.6A, NCH MOSFET420
  • 420:$2.5210
FQA9N90-F109
DISTI # FQA9N90-F109-ND		ON SemiconductorMOSFET N-CH 900V 8.6A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$2.5212
FQA9N90-F109
DISTI # V36:1790_06359134		ON Semiconductor900V, 8.6A, NCH MOSFET0
  • 450000:$1.4780
  • 225000:$1.4820
  • 45000:$1.8100
  • 4500:$2.4180
  • 450:$2.5210
FQA9N90_F109
DISTI # FQA9N90-F109		ON SemiconductorTrans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Rail - Bulk (Alt: FQA9N90-F109)
Min Qty: 160
Container: Bulk		Americas - 0
  • 800:$1.8900
  • 1600:$1.8900
  • 160:$1.9900
  • 320:$1.9900
  • 480:$1.9900
FQA9N90_F109
DISTI # FQA9N90-F109		ON SemiconductorTrans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FQA9N90-F109)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.4900
  • 900:$1.4900
  • 1800:$1.4900
  • 2700:$1.4900
  • 4500:$1.4900
FQA9N90-F109
DISTI # 48AC1160		ON SemiconductorQF 900V 1.3OHM TO3PN / TUBE0
  • 500:$1.6900
  • 250:$1.7400
  • 100:$2.0800
  • 50:$2.4100
  • 25:$2.5600
  • 10:$2.9200
  • 1:$3.3800
FQA9N90-F109
DISTI # 512-FQA9N90_F109		ON SemiconductorMOSFET 900V N-Channel QFET
RoHS: Compliant		352
  • 1:$3.4400
  • 10:$2.9200
  • 100:$2.5400
  • 250:$2.4100
  • 500:$2.1600
  • 1000:$1.8200
  • 2500:$1.7300
FQA9N90-F109ON Semiconductor 
RoHS: Not Compliant		1800
  • 1000:$1.7900
  • 500:$1.8800
  • 100:$1.9600
  • 25:$2.0500
  • 1:$2.2000
FQA9N90-F109Fairchild Semiconductor Corporation 
RoHS: Not Compliant		3998
  • 1000:$1.7900
  • 500:$1.8800
  • 100:$1.9600
  • 25:$2.0500
  • 1:$2.2000
FQA9N90-F109ON Semiconductor900V,1.3,9.6A,N-Channel MOSFET3950
  • 1:$2.2300
  • 100:$1.6800
  • 500:$1.4400
  • 1000:$1.3400
Bild Teil # Beschreibung
NE5532DR

Mfr.#: NE5532DR

OMO.#: OMO-NE5532DR

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FT232RL-TUBE

Mfr.#: FT232RL-TUBE

OMO.#: OMO-FT232RL-TUBE

 USB Interface IC FT232R Single Ch Full Speed
MBR0520LT3G

Mfr.#: MBR0520LT3G

OMO.#: OMO-MBR0520LT3G

 Schottky Diodes & Rectifiers 0.5A 20V
FT232RL-TUBE

Mfr.#: FT232RL-TUBE

OMO.#: OMO-FT232RL-TUBE-FUTURE-TECHNOLOGY-DEVICES-INTL

 USB Interface IC FT232R Single Ch Full Speed
MBR0520LT3G

Mfr.#: MBR0520LT3G

OMO.#: OMO-MBR0520LT3G-ON-SEMICONDUCTOR

 Schottky Diodes & Rectifiers 0.5A 20V
NE5532DR

Mfr.#: NE5532DR

OMO.#: OMO-NE5532DR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps Dual Low Noise Op
MJ15004G

Mfr.#: MJ15004G

OMO.#: OMO-MJ15004G-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT 20A 140V 250W PNP
Verfügbarkeit
Aktie:
352
Auf Bestellung:
2335
Menge eingeben:
Der aktuelle Preis von FQA9N90-F109 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,44 $
3,44 $
10
2,92 $
29,20 $
100
2,54 $
254,00 $
250
2,41 $
602,50 $
500
2,16 $
1 080,00 $
1000
1,82 $
1 820,00 $
2500
1,73 $
4 325,00 $
5000
1,67 $
8 350,00 $
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