SIE820DF-T1-E3

SIE820DF-T1-E3
Mfr. #:
SIE820DF-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SIE822DF-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIE820DF-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE820DF-T1-E3 DatasheetSIE820DF-T1-E3 Datasheet (P4-P6)SIE820DF-T1-E3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PolarPAK-10
Handelsname:
TrenchFET, PolarPAK
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
6.15 mm
Serie:
SIE
Breite:
5.16 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIE820DF-E3
Tags
SIE820, SIE82, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 30A 10-Pin PolarPAK T/R
***ronik
N-CH 20V 50A 4mOhm PolPAK RoHSconf
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:136A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.4V; Case Style:PolarPAK; Termination Type:SMD; Base Number:820; Charge, Gate N-channel:43nC; Current, Idm Pulse:80A; Power Dissipation:104mW; Power, Pd:104W; Resistance, Rds on @ Vgs = 2.5V:0.0064ohm; Resistance, Rds on @ Vgs = 4.5V:0.0035ohm; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Max:2V; Voltage, Vgs th Min:0.6V
Teil # Mfg. Beschreibung Aktie Preis
SIE820DF-T1-E3
DISTI # SIE820DF-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 20V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIE820DF-T1-E3
    DISTI # SIE820DF-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 20V 50A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SIE820DF-T1-E3
      DISTI # SIE820DF-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 20V 50A 10-POLARPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SIE820DF-T1-E3
        DISTI # 781-SIE820DF-T1-E3
        Vishay IntertechnologiesMOSFET 20V 50A 104W 3.5mohm @ 4.5V
        RoHS: Compliant
        0
          Bild Teil # Beschreibung
          SIE820DF-T1-E3

          Mfr.#: SIE820DF-T1-E3

          OMO.#: OMO-SIE820DF-T1-E3

          MOSFET RECOMMENDED ALT 781-SIE822DF-GE3
          SIE820DF-T1-E3

          Mfr.#: SIE820DF-T1-E3

          OMO.#: OMO-SIE820DF-T1-E3-VISHAY

          RF Bipolar Transistors MOSFET 20V 50A 104W 3.5mohm @ 4.5V
          SIE820DF

          Mfr.#: SIE820DF

          OMO.#: OMO-SIE820DF-1190

          Neu und Original
          SIE820DF-T1-GE3

          Mfr.#: SIE820DF-T1-GE3

          OMO.#: OMO-SIE820DF-T1-GE3-VISHAY

          MOSFET N-CH 20V 50A POLARPAK
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3500
          Menge eingeben:
          Der aktuelle Preis von SIE820DF-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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