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SI3460DDV-T1-GE3

SI3460DDV-T1-GE3
Mfr. #:
SI3460DDV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V Vds 8V Vgs TSOP-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3460DDV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3460DDV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSOP-6
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.05 mm
Serie:
SI3
Breite:
1.65 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI3460DDV-GE3
Gewichtseinheit:
0.000705 oz
Tags
SI3460DD, SI3460D, SI3460, SI346, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI3460DDV-T1-GE3 N-channel MOSFET Transistor; 7.9 A; 20 V; 6-Pin TSOP
***ure Electronics
N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
***ark
Mosfet,n Ch,d-S,20V,7.9A,tsop6, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.9A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:400Mv Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,D-S,20V,7.9A,TSOP6; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Power Dissipation Pd:1.7W; Voltage Vgs Max:8V
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3460DDV-T1-GE3
DISTI # V72:2272_09216674		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R
RoHS: Compliant		707
  • 500:$0.1516
  • 250:$0.1943
  • 100:$0.2187
  • 25:$0.2577
  • 10:$0.2864
  • 1:$0.3051
SI3460DDV-T1-GE3
DISTI # V36:1790_09216674		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000:$0.1227
SI3460DDV-T1-GE3
DISTI # SI3460DDV-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 7.9A 6-TSOP
Min Qty: 1
Container: Cut Tape (CT)		2970In Stock
  • 1000:$0.1576
  • 500:$0.2039
  • 100:$0.2596
  • 10:$0.3480
  • 1:$0.4100
SI3460DDV-T1-GE3
DISTI # SI3460DDV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 7.9A 6-TSOP
Min Qty: 1
Container: Digi-Reel®		2970In Stock
  • 1000:$0.1576
  • 500:$0.2039
  • 100:$0.2596
  • 10:$0.3480
  • 1:$0.4100
SI3460DDV-T1-GE3
DISTI # SI3460DDV-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 7.9A 6-TSOP
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1197
  • 15000:$0.1215
  • 6000:$0.1305
  • 3000:$0.1395
SI3460DDV-T1-GE3
DISTI # 32396519		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R
RoHS: Compliant		2551
  • 501:$0.1250
SI3460DDV-T1-GE3
DISTI # 32040187		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R
RoHS: Compliant		707
  • 500:$0.1516
  • 250:$0.1943
  • 101:$0.2187
SI3460DDV-T1-GE3
DISTI # SI3460DDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460DDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 30000:$0.1154
  • 18000:$0.1186
  • 12000:$0.1220
  • 6000:$0.1271
  • 3000:$0.1310
SI3460DDV-T1-GE3
DISTI # SI3460DDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R (Alt: SI3460DDV-T1-GE3)
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.0968
  • 18000:€0.1001
  • 12000:€0.1034
  • 6000:€0.1067
  • 3000:€0.1100
SI3460DDV-T1-GE3
DISTI # 87W5913		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 87W5913)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.1530
  • 500:$0.1980
  • 250:$0.2200
  • 100:$0.2410
  • 50:$0.2830
  • 25:$0.3240
  • 1:$0.4200
SI3460DDV-T1-GE3
DISTI # 23T8503		Vishay IntertechnologiesMOSFET,N CH,D-S,20V,7.9A,TSOP6,Transistor Polarity:N Channel,Continuous Drain Current Id:7.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1.7W,Operating RoHS Compliant: Yes
RoHS: Compliant		5807
  • 1000:$0.1530
  • 500:$0.1980
  • 250:$0.2200
  • 100:$0.2410
  • 50:$0.2830
  • 25:$0.3240
  • 1:$0.4200
SI3460DDV-T1-GE3
DISTI # 87W5913		Vishay IntertechnologiesMOSFET,N CHANNEL,D-S,20V,7.9A,TSOP6,Transistor Polarity:N Channel,Continuous Drain Current Id:7.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: Yes
RoHS: Not Compliant		2551
  • 1:$0.1000
  • 25:$0.1000
  • 50:$0.1000
  • 100:$0.1000
  • 250:$0.1000
  • 500:$0.1000
  • 1000:$0.1000
SI3460DDV-T1-GE3.
DISTI # 30AC0147		Vishay IntertechnologiesMOSFET,N CH,D-S,20V,7.9A,TSOP6, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: No
RoHS: Not Compliant		3000
  • 50000:$0.1170
  • 30000:$0.1280
  • 20000:$0.1390
  • 10000:$0.1560
  • 5000:$0.1790
  • 1:$0.1890
SI3460DDV-T1-GE3
DISTI # 70459522		Vishay SiliconixSI3460DDV-T1-GE3 N-channel MOSFET Transistor,7.9 A,20 V,6-Pin TSOP
RoHS: Not Compliant		0
  • 3000:$0.5550
  • 6000:$0.3760
SI3460DDV-T1-GE3
DISTI # 781-SI3460DDV-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs TSOP-6
RoHS: Compliant		8691
  • 1:$0.4000
  • 10:$0.3240
  • 100:$0.2410
  • 500:$0.1980
  • 1000:$0.1500
  • 3000:$0.1320
  • 24000:$0.1190
SI3460DDV-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs TSOP-6
RoHS: Compliant		Americas - 21000
    SI3460DDV-T1-GE3
    DISTI # 1656916    		Vishay IntertechnologiesOn a Reel of 3000, SI3460DDV-T1-GE3 N-Channel MOSFET, 7.9 A, 20 V, 6-Pin TSOP Vishay, RL
    Min Qty: 3000
    Container: Reel    		0
    • 3000:$0.1490
    SI3460DDV-T1-GE3
    DISTI # 8123158    		Vishay IntertechnologiesIn a Pack of 20, SI3460DDV-T1-GE3 N-Channel MOSFET, 7.9 A, 20 V, 6-Pin TSOP Vishay, PK
    Min Qty: 20
    Container: Package    		4800
    • 20:$0.1480
    SI3460DDV-T1-GE3
    DISTI # TMOSS6480    		Vishay IntertechnologiesN-CHANNEL-FET 7,9A 20V TSOP-6
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.1509
    • 6000:$0.1423
    • 9000:$0.1337
    • 15000:$0.1208
    • 18000:$0.1164
    SI3460DDV-T1-GE3
    DISTI # 1858948RL    		Vishay IntertechnologiesMOSFET,N CH,D-S,20V,7.9A,TSOP6
    RoHS: Compliant    		0
    • 5000:£0.1370
    • 1000:£0.1510
    • 500:£0.1650
    • 250:£0.1830
    • 100:£0.2000
    • 25:£0.2930
    • 5:£0.3070
    SI3460DDV-T1-GE3
    DISTI # 1858948    		Vishay IntertechnologiesMOSFET,N CH,D-S,20V,7.9A,TSOP6
    RoHS: Compliant    		6407
    • 5000:£0.1370
    • 1000:£0.1510
    • 500:£0.1650
    • 250:£0.1830
    • 100:£0.2000
    • 25:£0.2930
    • 5:£0.3070
    SI3460DDV-T1-GE3
    DISTI # 1858948    		Vishay IntertechnologiesMOSFET,N CH,D-S,20V,7.9A,TSOP6
    RoHS: Compliant    		5807
    • 500:$0.2980
    • 100:$0.3630
    • 10:$0.4880
    • 1:$0.6330
    SI3460DDV-T1-GE3
    DISTI # 1858948RL    		Vishay IntertechnologiesMOSFET,N CH,D-S,20V,7.9A,TSOP6
    RoHS: Compliant    		0
    • 500:$0.2980
    • 100:$0.3630
    • 10:$0.4880
    • 1:$0.6330
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    Mfr.#: NCP301LSN47T1G

    OMO.#: OMO-NCP301LSN47T1G

    		 Supervisory Circuits 4.7V Detector w/Reset Low
    AD8317ACPZ-R7

    Mfr.#: AD8317ACPZ-R7

    OMO.#: OMO-AD8317ACPZ-R7

    		 RF Detector 1MHz TO 10GHz 50dB
    SN74AXC8T245PWR

    Mfr.#: SN74AXC8T245PWR

    OMO.#: OMO-SN74AXC8T245PWR

    		 Translation - Voltage Levels 24 PIN TRANSLATOR FOR COBRA FAMILY ISL2
    SN74AVC4T245PWR

    Mfr.#: SN74AVC4T245PWR

    OMO.#: OMO-SN74AVC4T245PWR

    		 Translation - Voltage Levels 4-Bit Dual-Supply Bus Xcvr
    TXS0108EPWR

    Mfr.#: TXS0108EPWR

    OMO.#: OMO-TXS0108EPWR

    		 Translation - Voltage Levels 8B Bidir Vltg-Level Translator
    FXMA2102L8X

    Mfr.#: FXMA2102L8X

    OMO.#: OMO-FXMA2102L8X

    		 Translation - Voltage Levels 2xSupply 2Bit Volt. Trnsltr/Bffr/Rptr
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    Mfr.#: XP1001000-05R

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    		 Servers XPort XE Ext. Temp. without Encryption
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    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von SI3460DDV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,42 $
    0,42 $
    10
    0,32 $
    3,24 $
    100
    0,24 $
    24,10 $
    500
    0,20 $
    99,00 $
    1000
    0,15 $
    153,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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