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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SUP80090E-GE3 DISTI # V99:2348_14664663 | Vishay Intertechnologies | Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB | 0 |
|
| SUP80090E-GE3 DISTI # V36:1790_14664663 | Vishay Intertechnologies | Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB | 0 |
|
| SUP80090E-GE3 DISTI # SUP80090E-GE3-ND | Vishay Siliconix | MOSFET N-CH 150V 128A TO220AB Min Qty: 1 Container: Tube | On Order |
|
| SUP80090E-GE3 DISTI # SUP80090E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 150V 128A 3-Pin TO-220AB - Tape and Reel (Alt: SUP80090E-GE3) RoHS: Not Compliant Min Qty: 500 Container: Reel | Americas - 0 |
|
| SUP80090E-GE3 DISTI # 20AC4721 | Vishay Intertechnologies | N-CHANNEL 150-V (D-S) MOSFET RoHS: Not Compliant | 0 |
|
| SUP80090E-GE3 | Vishay Intertechnologies | MOSFET 150V Vds 20V Vgs TO-220 | Americas - | |
| SUP80090E | ISC | TO-220 | 5000 | |
| SUP80090E-GE3 DISTI # C1S803605066534 | Vishay Intertechnologies | MOSFETs RoHS: Compliant Min Qty: 1 | 1 |
|
| SUP80090E-GE3 DISTI # 2576516 | Vishay Intertechnologies | MOSFET, N-CH, 150V, 128A, TO-220AB-3 RoHS: Compliant | 0 |
|
| SUP80090E-GE3 DISTI # 2576516 | Vishay Intertechnologies | MOSFET, N-CH, 150V, 128A, TO-220AB-3 RoHS: Compliant | 18 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SUP85N10-10-E3 OMO.#: OMO-SUP85N10-10-E3 |
MOSFET 100V N-CH 175 DEG.C |
|
Mfr.#: SUP80N10 OMO.#: OMO-SUP80N10-1190 |
Neu und Original |
|
|
Mfr.#: SUP80N15-20L OMO.#: OMO-SUP80N15-20L-1190 |
Neu und Original |
|
|
Mfr.#: SUP8520-15BN5G/3TR OMO.#: OMO-SUP8520-15BN5G-3TR-1190 |
Neu und Original |
|
|
Mfr.#: SUP8520-18BN5G/3TR OMO.#: OMO-SUP8520-18BN5G-3TR-1190 |
Neu und Original |
|
|
Mfr.#: SUP85N03 OMO.#: OMO-SUP85N03-1190 |
Neu und Original |
|
|
Mfr.#: SUP85N03-04P. OMO.#: OMO-SUP85N03-04P--1190 |
Neu und Original |
|
|
Mfr.#: SUP85N04 OMO.#: OMO-SUP85N04-1190 |
Neu und Original |
|
|
Mfr.#: SUP85N10-10P OMO.#: OMO-SUP85N10-10P-1190 |
Neu und Original |
|
|
Mfr.#: SUP85N1010GE3 OMO.#: OMO-SUP85N1010GE3-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |