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IRF6610TRPBF

IRF6610TRPBF
Mfr. #:
IRF6610TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 20V 1 N-CH HEXFET 6.8mOhms 11nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6610TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6610TRPBF DatasheetIRF6610TRPBF Datasheet (P4-P6)IRF6610TRPBF Datasheet (P7-P9)IRF6610TRPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-SQ
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
15 A
Rds On - Drain-Source-Widerstand:
10.7 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
11 nC
Pd - Verlustleistung:
42 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
4.85 mm
Transistortyp:
1 N-Channel
Breite:
3.95 mm
Marke:
Infineon / IR
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
4800
Unterkategorie:
MOSFETs
Tags
IRF6610, IRF661, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
A 20V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET SQ PACKAGERATED AT 66
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):6.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SQ ;RoHS Compliant: Yes
***ernational Rectifier
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Teil # Mfg. Beschreibung Aktie Preis
IRF6610TRPBF
DISTI # IRF6610TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 20V 15A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6610TRPBF
    DISTI # IRF6610TRPBFCT-ND    		Infineon Technologies AGMOSFET N-CH 20V 15A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6610TRPBF
      DISTI # IRF6610TRPBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 20V 15A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6610TRPBF
        DISTI # 70019556        		Infineon Technologies AGA 20V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET SQ PACKAGERATED AT 66
        RoHS: Compliant        		0
        • 1:$1.0000
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von IRF6610TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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