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DMT6016LPS-13

DMT6016LPS-13
Mfr. #:
DMT6016LPS-13
Hersteller:
Diodes Incorporated
Beschreibung:
Darlington Transistors MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMT6016LPS-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMT6016LPS-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Einzeln
Serie
DMT60
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.003386 oz
Montageart
SMD/SMT
Paket-Koffer
8-PowerTDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerDI5060-8
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1.23W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
60V
Eingangskapazität-Ciss-Vds
864pF @ 30V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
10.6A (Ta)
Rds-On-Max-Id-Vgs
16 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Lade-Qg-Vgs
17nC @ 10V
Pd-Verlustleistung
2.7 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
7 ns
Anstiegszeit
5.2 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
10.6 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Widerstand
16 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
13 ns
Typische-Einschaltverzögerungszeit
3.4 ns
Qg-Gate-Ladung
17 nC
Kanal-Modus
Erweiterung
Tags
DMT6016, DMT601, DMT60, DMT6, DMT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 32 A, 60 V, 8-Pin POWERDI5060 Diodes Inc DMT6016LPS-13
***ical
Trans MOSFET N-CH 60V 10.6A Automotive 8-Pin PowerDI EP T/R
***et
Trans MOSFET N-CH 60V 32A 8-Pin PowerDI 5060 T/R
***ure Electronics
MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K
***i-Key
MOSFET N-CH 60V 10.6A POWERDI
***ment14 APAC
MOSFET, N-CH, 32A, 60V, POWERDI5060; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:60V; On Resistance Rds(On):15Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.23W; No. Of Pins:8Pins Rohs Compliant: No
DMTx MOSFETs
Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.
DMT6016LPS Enhancement Mode MOSFET
Diodes Incorporated DMT6016LPS 60V N-Channel Enhancement Mode MOSFET minimizes the on-state resistance (RDS(ON)) while maintaining superior switching performance. DMT6016LPS offers low on-state resistance, high conversion efficiency, and low input capacitance. The thermally efficient POWERDI5060-8 package allows DMT6016LPS to support cooler running applications. With a <1.1mm package profile, DMT6016LPS is ideal for thin applications including load switches, adapter switches, and notebook PCs.Learn More
Gate Drivers
Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Teil # Mfg. Beschreibung Aktie Preis
DMT6016LPS-13
DISTI # DMT6016LPS-13DICT-ND		Diodes IncorporatedMOSFET N-CH 60V 10.6A POWERDI
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11298In Stock
  • 1000:$0.2774
  • 500:$0.3589
  • 100:$0.4895
  • 10:$0.6530
  • 1:$0.7700
DMT6016LPS-13
DISTI # DMT6016LPS-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 10.6A POWERDI
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11298In Stock
  • 1000:$0.2774
  • 500:$0.3589
  • 100:$0.4895
  • 10:$0.6530
  • 1:$0.7700
DMT6016LPS-13
DISTI # DMT6016LPS-13DITR-ND		Diodes IncorporatedMOSFET N-CH 60V 10.6A POWERDI
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		10000In Stock
  • 2500:$0.2455
DMT6016LPS-13
DISTI # DMT6016LPS-13		Diodes IncorporatedTrans MOSFET N-CH 60V 32A 8-Pin PowerDI 5060 T/R - Tape and Reel (Alt: DMT6016LPS-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 17500
  • 2500:$0.2059
  • 5000:$0.2059
  • 10000:$0.2049
  • 15000:$0.2049
  • 25000:$0.2039
DMT6016LPS-13Diodes IncorporatedN-Channel 60 V 16 mO Enhancement Mode Mosfet - PowerDI-5060-8
RoHS: Compliant		5000Reel
  • 2500:$0.2850
DMT6016LPS-13
DISTI # 621-DMT6016LPS-13		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
RoHS: Compliant		5980
  • 1:$0.6300
  • 10:$0.5200
  • 100:$0.3170
  • 1000:$0.2450
  • 2500:$0.2090
DMT6016LPS-13
DISTI # 9211173P		Zetex / Diodes Inc60V 10.6A N-CH MOSFET TRANS, RL2480
  • 200:£0.1620
Bild Teil # Beschreibung
DMT6016LSS-13

Mfr.#: DMT6016LSS-13

OMO.#: OMO-DMT6016LSS-13

 MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
DMT6013LFDF-7

Mfr.#: DMT6013LFDF-7

OMO.#: OMO-DMT6013LFDF-7

 MOSFET MOSFET BVDSS: 41V-60V
DMT6013LSS-13

Mfr.#: DMT6013LSS-13

OMO.#: OMO-DMT6013LSS-13

 MOSFET MOSFET BVDSS 41V-60V
DMT6010LFG

Mfr.#: DMT6010LFG

OMO.#: OMO-DMT6010LFG-1190

 Neu und Original
DMT6015LFV-13

Mfr.#: DMT6015LFV-13

OMO.#: OMO-DMT6015LFV-13-DIODES

 Trans MOSFET N-CH 60V 9.5A T/R
DMT6015LSS-13

Mfr.#: DMT6015LSS-13

OMO.#: OMO-DMT6015LSS-13-DIODES

 Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R
DMT6016LSS

Mfr.#: DMT6016LSS

OMO.#: OMO-DMT6016LSS-1190

 Neu und Original
DMT6012LSS-13

Mfr.#: DMT6012LSS-13

OMO.#: OMO-DMT6012LSS-13-DIODES

 MOSFET N-CH 60V8SOIC
DMT6016LSS-13

Mfr.#: DMT6016LSS-13

OMO.#: OMO-DMT6016LSS-13-DIODES

 IGBT Transistors MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
DMT6016LFDF-13

Mfr.#: DMT6016LFDF-13

OMO.#: OMO-DMT6016LFDF-13-DIODES

 MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von DMT6016LPS-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,31 $
0,31 $
10
0,29 $
2,91 $
100
0,28 $
27,53 $
500
0,26 $
130,00 $
1000
0,24 $
244,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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