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SIHG039N60E-GE3

SIHG039N60E-GE3
Mfr. #:
SIHG039N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds; 30V Vgs TO-247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG039N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHG039N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
63 A
Rds On - Drain-Source-Widerstand:
39 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
126 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
357 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
17 S
Abfallzeit:
94 ns
Produktart:
MOSFET
Anstiegszeit:
126 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
176 ns
Typische Einschaltverzögerungszeit:
79 ns
Tags
SIHG0, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHG039N60E-GE3
DISTI # V72:2272_22759361		Vishay IntertechnologiesE Series Power MOSFET TO247AC, 39 m @ 10V500
  • 500:$6.8490
  • 250:$7.3870
  • 100:$7.8490
  • 25:$9.4789
  • 10:$9.6880
  • 1:$10.8410
SIHG039N60E-GE3
DISTI # SIHG039N60E-GE3-ND		Vishay SiliconixMOSFET E SERIES 600V TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		525In Stock
  • 500:$7.2570
  • 100:$8.3339
  • 25:$9.5980
  • 10:$10.0660
  • 1:$11.1400
SIHG039N60E-GE3
DISTI # 33958067		Vishay IntertechnologiesE Series Power MOSFET TO247AC, 39 m @ 10V500
  • 500:$6.8490
  • 250:$7.3870
  • 100:$7.8490
  • 25:$9.4789
  • 10:$9.6880
  • 2:$10.8410
SIHG039N60E-GE3
DISTI # SIHG039N60E-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHG039N60E-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$5.6900
  • 3000:$5.7900
  • 2000:$5.9900
  • 1000:$6.1900
  • 500:$6.3900
SIHG039N60E-GE3
DISTI # 99AC9557		Vishay IntertechnologiesMOSFET, N-CH, 63A, 600V, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes50
  • 250:$7.6600
  • 100:$8.3300
  • 50:$9.2300
  • 25:$9.6800
  • 10:$10.1300
  • 1:$11.2500
SIHG039N60E-GE3
DISTI # 78-SIHG039N60E-GE3		Vishay IntertechnologiesMOSFET 650V Vds,30V Vgs TO-247AC
RoHS: Compliant		525
  • 1:$11.1400
  • 10:$10.0300
  • 50:$9.1400
  • 100:$8.2500
  • 250:$7.5800
SIHG039N60E-GE3
DISTI # 3019086		Vishay IntertechnologiesMOSFET, N-CH, 63A, 600V, TO-247AC50
  • 100:£5.9800
  • 50:£6.6200
  • 10:£7.2700
  • 5:£8.0700
  • 1:£8.6000
SIHG039N60E-GE3
DISTI # 3019086		Vishay IntertechnologiesMOSFET, N-CH, 63A, 600V, TO-247AC
RoHS: Compliant		50
  • 250:$7.9400
  • 100:$9.3400
  • 50:$9.8400
  • 10:$10.3300
  • 5:$11.8300
  • 1:$12.8900
Bild Teil # Beschreibung
SIHG039N60EF-GE3

Mfr.#: SIHG039N60EF-GE3

OMO.#: OMO-SIHG039N60EF-GE3

 MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology
SIHG039N60E-GE3

Mfr.#: SIHG039N60E-GE3

OMO.#: OMO-SIHG039N60E-GE3

 MOSFET 650V Vds; 30V Vgs TO-247AC
SIHG039N60E-GE3

Mfr.#: SIHG039N60E-GE3

OMO.#: OMO-SIHG039N60E-GE3-VISHAY

 E Series Power MOSFET TO247AC, 39 m @ 10V
Verfügbarkeit
Aktie:
525
Auf Bestellung:
2508
Menge eingeben:
Der aktuelle Preis von SIHG039N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,14 $
11,14 $
10
10,03 $
100,30 $
50
9,14 $
457,00 $
100
8,25 $
825,00 $
250
7,58 $
1 895,00 $
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