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IPI60R520CP

IPI60R520CP
Mfr. #:
IPI60R520CP
Hersteller:
Infineon Technologies AG
Beschreibung:
MOSFET N-Ch 600V 6.8A I2PAK-3 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI60R520CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPI60R, IPI60, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
6.8 A 600 V 0.52 ohm N-CHANNEL Si POWER MOSFET TO-262AA
***el Electronic
Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.8A; On State Resistance:0.52ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.52ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 66W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***ical
Trans MOSFET N-CH 560V 7.6A Automotive 3-Pin(3+Tab) TO-262 Tube
***ment14 APAC
MOSFET, N, 500V, I2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):600mohm; Threshold Voltage Vgs Typ:3V; Transistor Case Style:I2-PAK; Package / Case:I2-PAK; Power Dissipation Pd:83W; Pulse Current Idm:22.8A; Termination Type:Through Hole; Transistor Type:Enhancement; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***et
Transistor MOSFET N-Channel 600V 7.3A 3-Pin TO-262 Tube
***nell
MOSFET, N, 600V, I2-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:7.3A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I2-PAK; Termination Type:Through Hole; Current, Idm Pulse:21.9A; Power, Pd:83W; Voltage, Vds:600V; Voltage, Vds Max:600V
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
*** Electronics
Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO262-3-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
*** Electronics
Trans MOSFET P-CH 60V 7A 3-Pin(3+Tab) I2PAK Rail
***ser
MOSFETs 60V P-Channel QFET
***-Wing Technology
P-CHANNEL POWER MOSFET
***i-Key
MOSFET N-CH 250V 8.8A I2PAK
***ser
MOSFETs 250V N-Channel Adv Q-FET C-Series
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
*** Electronics
POWER, N-CHANNEL, MOSFET
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in I2PAKFP package
*** Electronics
STMICROELECTRONICS STFI11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-281-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 25W; Transistor Case Style: TO-281; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
IPI60R520CPAKSA1
DISTI # IPI60R520CPAKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPI60R520CP
    DISTI # 726-IPI60R520CP    		Infineon Technologies AGMOSFET N-Ch 600V 6.8A I2PAK-3 CoolMOS CP
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      IPI60R380C6XKSA1

      Mfr.#: IPI60R380C6XKSA1

      OMO.#: OMO-IPI60R380C6XKSA1

      		 MOSFET LOW POWER_LEGACY
      IPI60R199CPXKSA2

      Mfr.#: IPI60R199CPXKSA2

      OMO.#: OMO-IPI60R199CPXKSA2-INFINEON-TECHNOLOGIES

      		 HIGH POWER_LEGACY
      IPI60R099CPA-6R099A

      Mfr.#: IPI60R099CPA-6R099A

      OMO.#: OMO-IPI60R099CPA-6R099A-1190

      		 Neu und Original
      IPI60R199CP

      Mfr.#: IPI60R199CP

      OMO.#: OMO-IPI60R199CP-1190

      		 Trans MOSFET N-CH 650V 16A 3-Pin TO-262 Tube - Bulk (Alt: IPI60R199CP)
      IPI60R199CP(6R199P)

      Mfr.#: IPI60R199CP(6R199P)

      OMO.#: OMO-IPI60R199CP-6R199P--1190

      		 Neu und Original
      IPI60R199CP,6R199P

      Mfr.#: IPI60R199CP,6R199P

      OMO.#: OMO-IPI60R199CP-6R199P-1190

      		 Neu und Original
      IPI60R385CPXKSA1

      Mfr.#: IPI60R385CPXKSA1

      OMO.#: OMO-IPI60R385CPXKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 9A I2PAK
      IPI60R250CPAKSA1

      Mfr.#: IPI60R250CPAKSA1

      OMO.#: OMO-IPI60R250CPAKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-Ch 650V 12A I2PAK-3
      IPI60R099CP

      Mfr.#: IPI60R099CP

      OMO.#: OMO-IPI60R099CP-317

      		 RF Bipolar Transistors MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CP
      IPI60R299CP

      Mfr.#: IPI60R299CP

      OMO.#: OMO-IPI60R299CP-317

      		 RF Bipolar Transistors MOSFET N-Ch 650V 11A I2PAK-3 CoolMOS CP
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IPI60R520CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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