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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SQ7414EN-T1-E3 | Vishay Siliconix | 5.6 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET | 130891 |
|
| SQ7414EN-T1-E3 | Vishay Semiconductors | 5.6 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET | 3000 |
|
| SQ7414ENT1E3 | Vishay Intertechnologies | Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Americas - 8623 | |
| SQ7414EN-T1-E3 DISTI # 1869901 | Vishay Intertechnologies | MOSFET,N CH,W DI,60V,5.6A,POPAK1212 RoHS: Compliant | 0 |
|
| SQ7414EN-T1-E3 DISTI # 1869901 | Vishay Intertechnologies | MOSFET,N CH,W DI,60V,5.6A,POPAK1212 RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SQ7414EN OMO.#: OMO-SQ7414EN-1190 |
Neu und Original |
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Mfr.#: SQ7414EN-T1-E3 OMO.#: OMO-SQ7414EN-T1-E3-1190 |
MOSFET 60V 5.6A 1.5W 25mohm @ 10V |
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Mfr.#: SQ7414EN-T1-GE3 OMO.#: OMO-SQ7414EN-T1-GE3-1190 |
Neu und Original |
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Mfr.#: SQ7414ENT1E3 OMO.#: OMO-SQ7414ENT1E3-1190 |
Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |