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IPB031NE7N3 G

IPB031NE7N3 G
Mfr. #:
IPB031NE7N3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB031NE7N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB031NE7N3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
2.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
117 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
214 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
75 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
85 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
IPB031NE7N3GATMA1 IPB31NE7N3GXT SP000641730
Gewichtseinheit:
0.139332 oz
Tags
IPB031NE7N3G, IPB031NE, IPB031, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB031NE7N3GATMA1
DISTI # V36:1790_06378783		Infineon Technologies AGTrans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 5000:$1.4000
  • 2000:$1.4630
  • 1000:$1.5570
IPB031NE7N3GATMA1
DISTI # V72:2272_06378783		Infineon Technologies AGTrans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		105
  • 100:$2.1050
  • 25:$2.4450
  • 10:$2.4699
  • 1:$3.2186
IPB031NE7N3GATMA1
DISTI # IPB031NE7N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPB031NE7N3GATMA1
    DISTI # IPB031NE7N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 75V 100A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPB031NE7N3GATMA1
      DISTI # IPB031NE7N3GATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 75V 100A TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$1.6433
      IPB031NE7N3GATMA1
      DISTI # 30675938      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		1000
      • 1000:$1.3720
      IPB031NE7N3GATMA1
      DISTI # 27084324      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		1000
      • 1000:$1.5570
      IPB031NE7N3GATMA1
      DISTI # 26195061      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		105
      • 5:$3.2186
      IPB031NE7N3GATMA1
      DISTI # SP000641730      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 (Alt: SP000641730)
      RoHS: Compliant
      Min Qty: 1000      		Europe - 240
      • 10000:€1.1900
      • 6000:€1.2900
      • 4000:€1.3900
      • 2000:€1.4900
      • 1000:€1.7900
      IPB031NE7N3 G
      DISTI # IPB031NE7N3 G      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin TO-263 T/R - Bulk (Alt: IPB031NE7N3 G)
      Min Qty: 250
      Container: Bulk      		Americas - 0
      • 1250:$1.1900
      • 2500:$1.1900
      • 500:$1.2900
      • 750:$1.2900
      • 250:$1.3900
      IPB031NE7N3 G
      DISTI # IPB031NE7N3G      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin TO-263 T/R - Bulk (Alt: IPB031NE7N3G)
      RoHS: Not Compliant
      Min Qty: 243
      Container: Bulk      		Americas - 0
      • 729:$1.3900
      • 1215:$1.3900
      • 2430:$1.3900
      • 486:$1.4900
      • 243:$1.5900
      IPB031NE7N3GATMA1
      DISTI # IPB031NE7N3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB031NE7N3GATMA1)
      RoHS: Compliant
      Min Qty: 250
      Container: Bulk      		Americas - 0
      • 1250:$1.1900
      • 2500:$1.1900
      • 500:$1.2900
      • 750:$1.2900
      • 250:$1.3900
      IPB031NE7N3GATMA1
      DISTI # IPB031NE7N3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB031NE7N3GATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 4000:$1.3900
      • 6000:$1.3900
      • 10000:$1.3900
      • 2000:$1.4900
      • 1000:$1.5900
      IPB031NE7N3 G
      DISTI # 726-IPB031NE7N3GXT      		Infineon Technologies AGMOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3
      RoHS: Compliant      		1043
      • 1:$2.9500
      • 10:$2.5100
      • 100:$2.1800
      • 250:$2.0600
      • 500:$1.8500
      • 1000:$1.5600
      • 2000:$1.4800
      • 5000:$1.4300
      IPB031NE7N3GATMA1
      DISTI # 726-IPB031NE7N3GATMA      		Infineon Technologies AGMOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3
      RoHS: Compliant      		500
      • 1:$2.9500
      • 10:$2.5100
      • 100:$2.1800
      • 250:$2.0600
      • 500:$1.8500
      • 1000:$1.5600
      • 2000:$1.4800
      • 5000:$1.4300
      IPB031NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		9752
      • 1000:$1.4700
      • 500:$1.5500
      • 100:$1.6200
      • 25:$1.6800
      • 1:$1.8100
      IPB031NE7N3 GInfineon Technologies AG 
      RoHS: Not Compliant      		52
      • 1000:$1.3200
      • 500:$1.3900
      • 100:$1.4400
      • 25:$1.5000
      • 1:$1.6200
      IPB031NE7N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		894
      • 1000:$1.3200
      • 500:$1.3900
      • 100:$1.4400
      • 25:$1.5000
      • 1:$1.6200
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von IPB031NE7N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,95 $
      2,95 $
      10
      2,51 $
      25,10 $
      100
      2,18 $
      218,00 $
      250
      2,06 $
      515,00 $
      500
      1,85 $
      925,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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