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DMN1025UFDB-7

DMN1025UFDB-7
Mfr. #:
DMN1025UFDB-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN1025UFDB-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
U-DFN2020-B-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
6.9 A
Rds On - Drain-Source-Widerstand:
25 mOhms, 25 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
12.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.7 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN1025
Transistortyp:
2 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
-
Abfallzeit:
2.8 ns
Produktart:
MOSFET
Anstiegszeit:
9.3 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17.2 ns
Typische Einschaltverzögerungszeit:
3 ns
Tags
DMN102, DMN10, DMN1, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W
Teil # Mfg. Beschreibung Aktie Preis
DMN1025UFDB-7
DISTI # V36:1790_19111892		Zetex / Diodes IncDual N-Channel Enhancement Mode MOSFET0
  • 3000:$0.1278
DMN1025UFDB-7
DISTI # DMN1025UFDB-7		Diodes IncorporatedMOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W (Alt: DMN1025UFDB-7)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€0.0749
  • 18000:€0.0799
  • 12000:€0.0909
  • 6000:€0.0979
  • 3000:€0.1349
DMN1025UFDB-7
DISTI # DMN1025UFDB-7		Diodes IncorporatedMOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W - Tape and Reel (Alt: DMN1025UFDB-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.0679
  • 18000:$0.0689
  • 12000:$0.0719
  • 6000:$0.0759
  • 3000:$0.0799
DMN1025UFDB-7
DISTI # DMN1025UFDB-7		Diodes IncorporatedMOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W (Alt: DMN1025UFDB-7)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 150000:$0.0683
  • 75000:$0.0701
  • 30000:$0.0720
  • 15000:$0.0730
  • 9000:$0.0751
  • 6000:$0.0784
  • 3000:$0.0820
DMN1025UFDB-7
DISTI # 621-DMN1025UFDB-7		Diodes IncorporatedMOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W
RoHS: Compliant		3818
  • 1:$0.3700
  • 10:$0.2840
  • 100:$0.1540
  • 1000:$0.1160
  • 3000:$0.1000
  • 9000:$0.0930
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von DMN1025UFDB-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,37 $
0,37 $
10
0,28 $
2,84 $
100
0,15 $
15,40 $
1000
0,12 $
116,00 $
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