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IDW10G65C5XKSA1

IDW10G65C5XKSA1
Mfr. #:
IDW10G65C5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
Schottky Diodes & Rectifiers SIC DIODES
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IDW10G65C5XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IDW10G65C5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Wenn - Vorwärtsstrom:
10 A
Vrrm - Repetitive Sperrspannung:
650 V
Vf - Durchlassspannung:
1.5 V
Ifsm - Vorwärtsstoßstrom:
58 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
0.5 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
CoolSiC
Verpackung:
Rohr
Marke:
Infineon-Technologien
Pd - Verlustleistung:
65 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
240
Unterkategorie:
Dioden & Gleichrichter
Handelsname:
CoolSiC
Vr - Sperrspannung:
650 V
Teil # Aliase:
IDW10G65C5 SP001633164
Gewichtseinheit:
0.211644 oz
Tags
IDW10G6, IDW10G, IDW10, IDW1, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Diode Silicon Carbide Schottky 65 V 1A (DC) Through Hole PG-TO247-3-41
***ow.cn
Diode Schottky SiC 650V 10A 3-Pin(3+Tab) TO-247 Tube
***i-Key
DIODE SIL CARB 650V 10A TO247-3
*** Electronic Components
Schottky Diodes & Rectifiers SIC DIODES
***ineon SCT
CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes, PG-TO247-3, RoHS
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Teil # Mfg. Beschreibung Aktie Preis
IDW10G65C5XKSA1
DISTI # V36:1790_17076625		Infineon Technologies AG650V SiC Schottky Diode0
  • 240000:$2.2940
  • 120000:$2.2990
  • 24000:$3.0800
  • 2400:$4.7200
  • 240:$5.0100
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 10A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		480In Stock
  • 2640:$2.5172
  • 720:$3.1417
  • 240:$3.6906
  • 25:$4.2584
  • 10:$4.5040
  • 1:$5.0200
IDW10G65C5XKSA1
DISTI # SP001633164		Infineon Technologies AGSIC DIODES (Alt: SP001633164)
RoHS: Compliant
Min Qty: 1		Europe - 1127
  • 1000:€2.0900
  • 500:€2.1900
  • 100:€2.2900
  • 50:€2.3900
  • 25:€2.4900
  • 10:€2.5900
  • 1:€2.7900
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW10G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.3900
  • 2400:$2.3900
  • 960:$2.4900
  • 480:$2.5900
  • 240:$2.6900
IDW10G65C5XKSA1
DISTI # 726-IDW10G65C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		445
  • 1:$5.0100
  • 10:$4.2500
  • 100:$3.6900
  • 250:$3.5000
  • 500:$3.1400
IDW10G65C5XKSA1
DISTI # XSKDRABV0030553		Infineon Technologies AG 
RoHS: Compliant		467 in Stock0 on Order
  • 467:$3.3200
  • 240:$3.5500
Bild Teil # Beschreibung
TPD1E04U04DPYR

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OMO.#: OMO-TPD1E04U04DPYR

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PIC18F4520-I/PT

Mfr.#: PIC18F4520-I/PT

OMO.#: OMO-PIC18F4520-I-PT

 8-bit Microcontrollers - MCU 32KB 1536 RAM 36I/O
CGA4J1X7R0J106K125AC

Mfr.#: CGA4J1X7R0J106K125AC

OMO.#: OMO-CGA4J1X7R0J106K125AC

 Multilayer Ceramic Capacitors MLCC - SMD/SMT CGA 0805 6.3V 10uF X7R 10% AEC-Q200
MCZ1210DH120L2TA0G

Mfr.#: MCZ1210DH120L2TA0G

OMO.#: OMO-MCZ1210DH120L2TA0G

 Common Mode Chokes / Filters 0504 12ohms 2 Lines HDMI, DVI, USB3.0
LM27762DSSR

Mfr.#: LM27762DSSR

OMO.#: OMO-LM27762DSSR

 LDO Voltage Regulators Low-Noise Positive- and Negative-Output Charge Pump With Integrated LDO 12-WSON -40 to 85
B32913B5224K

Mfr.#: B32913B5224K

OMO.#: OMO-B32913B5224K-EPCOS

 Film Capacitors 0.22uF 530Vac X1 MKP 10% LS=22.5mm
B32923C3225M

Mfr.#: B32923C3225M

OMO.#: OMO-B32923C3225M-800

 Film Capacitors 2.2uF 305V 20% 22.5mm L/S Class X2
MCZ1210DH120L2TA0G

Mfr.#: MCZ1210DH120L2TA0G

OMO.#: OMO-MCZ1210DH120L2TA0G-TDK

 Common Mode Chokes Dual 12Ohm 100MHz 100mA 1.5Ohm DCR SMD T/R
LMZM23601V5SILT

Mfr.#: LMZM23601V5SILT

OMO.#: OMO-LMZM23601V5SILT-TEXAS-INSTRUMENTS

 36V NANO MODULE
TPD1E04U04DPYR

Mfr.#: TPD1E04U04DPYR

OMO.#: OMO-TPD1E04U04DPYR-TEXAS-INSTRUMENTS

 TVS DIODE 3.6V 8.9V 2X1SON
Verfügbarkeit
Aktie:
445
Auf Bestellung:
2428
Menge eingeben:
Der aktuelle Preis von IDW10G65C5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,01 $
5,01 $
10
4,25 $
42,50 $
100
3,69 $
369,00 $
250
3,50 $
875,00 $
500
3,14 $
1 570,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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