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IRFU3707ZPBF

IRFU3707ZPBF
Mfr. #:
IRFU3707ZPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFU3707ZPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
56 A
Rds On - Drain-Source-Widerstand:
12.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
9.6 nC
Pd - Verlustleistung:
50 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001567690
Gewichtseinheit:
0.139332 oz
Tags
IRFU3707, IRFU370, IRFU37, IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W
***ure Electronics
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - TO-251
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ment14 APAC
MOSFET, N, LOGIC, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:50W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:56A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
Teil # Mfg. Beschreibung Aktie Preis
IRFU3707ZPBF
DISTI # IRFU3707ZPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 56A I-PAK
RoHS: Compliant
Min Qty: 1950
Container: Tube		Limited Supply - Call
    IRFU3707ZPBF
    DISTI # IRFU3707ZPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 56A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU3707ZPBF)
    RoHS: Compliant
    Min Qty: 1950
    Container: Tube    		Americas - 25
      IRFU3707ZPBF
      DISTI # 70017046      		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 7.5 Milliohms,ID 56A,I-Pak (TO-251AA),PD 50W
      RoHS: Compliant      		0
      • 1950:$1.5600
      • 3900:$1.5290
      • 9750:$1.4820
      • 19500:$1.4200
      • 48750:$1.3260
      IRFU3707ZPBF
      DISTI # 942-IRFU3707ZPBF      		Infineon Technologies AGMOSFET MOSFT 30V 56A 9.5mOhm 9.6nC
      RoHS: Compliant      		44
      • 1:$1.2600
      • 10:$1.0700
      • 100:$0.8280
      • 500:$0.7320
      • 1000:$0.5770
      • 2500:$0.5100
      • 5000:$0.5010
      • 10000:$0.4910
      IRFU3707ZPBFInternational Rectifier 
      RoHS: Not Compliant      		903
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      IRFU3707ZPBF
      DISTI # IRFU3707ZPBF      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,56A,50W,IPAK5
      • 1:$0.9700
      • 3:$0.8600
      • 10:$0.7600
      • 75:$0.6700
      IRFU3707ZPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 1200
        IRFU3707ZPBF
        DISTI # 1013424        		Infineon Technologies AGMOSFET, N, LOGIC, I-PAK
        RoHS: Compliant        		0
        • 1:$2.0000
        • 10:$1.7000
        • 100:$1.3200
        • 500:$1.1600
        • 1000:$0.9390
        IRFU3707ZPBF
        DISTI # XSLY00000001062        		INFINEON/IRI-PAK (TO-251)
        RoHS: Compliant        		11124
        • 2400:$0.3000
        • 11124:$0.2800
        Bild Teil # Beschreibung
        RP73D2A49R9BTG

        Mfr.#: RP73D2A49R9BTG

        OMO.#: OMO-RP73D2A49R9BTG

        		 Thin Film Resistors - SMD RP 2A 49R9 0.1% 15PPM CUT LENGTH
        HR10A-7R-6S(73)

        Mfr.#: HR10A-7R-6S(73)

        OMO.#: OMO-HR10A-7R-6S-73--HIROSE

        		 Circular Push Pull Connectors 6P RECP SHELL SZ 7 FEMALE SIL TERM SLDR
        RP73D2A49R9BTG

        Mfr.#: RP73D2A49R9BTG

        OMO.#: OMO-RP73D2A49R9BTG-TE-CONNECTIVITY-AMP

        		 Thin Film Resistors - SMD RP 2A 49R9 0.1% 15PPM CUT LENGTH
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von IRFU3707ZPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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