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BSO110N03MSGXUMA1

BSO110N03MSGXUMA1
Mfr. #:
BSO110N03MSGXUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSO110N03MSGXUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
12.1 A
Rds On - Drain-Source-Widerstand:
9.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
OptiMOS 3M
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
16 S
Abfallzeit:
4.4 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
4.4 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
9.5 ns
Typische Einschaltverzögerungszeit:
7.8 ns
Teil # Aliase:
BSO110N03MS BSO11N3MSGXT G SP000446062
Gewichtseinheit:
0.019048 oz
Tags
BSO110N03MSG, BSO110N03M, BSO110, BSO11, BSO1, BSO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V
***ment14 APAC
MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:30V; On Resistance
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS
***nell
MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
MOSFET; N Channel; MOS; Trans; 30V; 10.3A; SO8
***S
French Electronic Distributor since 1988
***ure Electronics
N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8
***ark
Mosfet,+Sch,n Channel,30V,11A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***nell
MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.55W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
***ark
Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
***eco
Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC
***ure Electronics
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V
***ure Electronics
Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ure Electronics
Single P-Channel 30 V 1.45 W 20.5 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R
***ark
Mosfet, P-Ch, 30V, 9.9A, Soic Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
BSO110N03MSGXUMA1
DISTI # V72:2272_06390999		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R
RoHS: Compliant		5000
  • 3000:$0.2775
  • 1000:$0.3083
  • 500:$0.3731
  • 250:$0.4054
  • 100:$0.4373
  • 25:$0.6025
  • 10:$0.7543
  • 1:$0.9093
BSO110N03MSGXUMA1
DISTI # V36:1790_06390999		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R
RoHS: Compliant		0
  • 2500000:$0.2615
  • 1250000:$0.2617
  • 250000:$0.2782
  • 25000:$0.3055
  • 2500:$0.3100
BSO110N03MSGXUMA1
DISTI # BSO110N03MSGXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 10A 8DSO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.3418
BSO110N03MSGXUMA1
DISTI # 33950970		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R
RoHS: Compliant		5000
  • 23:$0.3075
BSO110N03MSGXUMA1
DISTI # BSO110N03MSGXUMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R - Tape and Reel (Alt: BSO110N03MSGXUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2849
  • 15000:$0.2899
  • 10000:$0.2999
  • 5000:$0.3109
  • 2500:$0.3229
BSO110N03MSGXUMA1
DISTI # 50Y1819		Infineon Technologies AGMOSFET Transistor, N Channel, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 1000:$0.3640
  • 500:$0.3940
  • 250:$0.4240
  • 100:$0.4530
  • 50:$0.5370
  • 25:$0.6200
  • 10:$0.7030
  • 1:$0.8380
BSO110N03MS G
DISTI # 726-BSO110N03MSG		Infineon Technologies AGMOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
RoHS: Compliant		2490
  • 1:$0.8300
  • 10:$0.6960
  • 100:$0.4490
  • 1000:$0.3600
BSO110N03MSGXUMA1
DISTI # 726-BSO110N03MSGXUMA		Infineon Technologies AGMOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
RoHS: Compliant		0
  • 1:$0.8300
  • 10:$0.6960
  • 100:$0.4490
  • 1000:$0.3600
BSO110N03MSGXUMA1
DISTI # 8268989P		Infineon Technologies AGMOSFET N-CH 10A 30V OPTIMOS3 DSO8, RL12450
  • 1000:£0.2720
  • 500:£0.3120
  • 250:£0.3160
  • 100:£0.3230
BSO110N03MSGXUMA1
DISTI # BSO110N03MSGXUMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,12.1A,1.56W,PG-DSO-82480
  • 500:$0.3198
  • 100:$0.3435
  • 25:$0.3953
  • 5:$0.4471
  • 1:$0.5439
BSO110N03MSGXUMA1
DISTI # 2480751RL		Infineon Technologies AGMOSFET, N-CH, 30V, 10A, SOIC-8
RoHS: Compliant		0
  • 2500:$0.5440
  • 1000:$0.5540
  • 100:$0.6910
  • 10:$1.0800
  • 1:$1.2800
BSO110N03MSGXUMA1
DISTI # 2480751		Infineon Technologies AGMOSFET, N-CH, 30V, 10A, SOIC-8
RoHS: Compliant		1140
  • 2500:$0.5440
  • 1000:$0.5540
  • 100:$0.6910
  • 10:$1.0800
  • 1:$1.2800
BSO110N03MSGXUMA1
DISTI # 2480751		Infineon Technologies AGMOSFET, N-CH, 30V, 10A, SOIC-81111
  • 500:£0.3000
  • 250:£0.3220
  • 100:£0.3450
  • 10:£0.5890
  • 1:£0.7310
Bild Teil # Beschreibung
LM25007SD/NOPB

Mfr.#: LM25007SD/NOPB

OMO.#: OMO-LM25007SD-NOPB

 Switching Voltage Regulators 42V 0.5A SD Switching Reg
LM25007SD/NOPB

Mfr.#: LM25007SD/NOPB

OMO.#: OMO-LM25007SD-NOPB-TEXAS-INSTRUMENTS

 Voltage Regulators - Switching Regulators 42V 0.5A SD Switching Reg
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von BSO110N03MSGXUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,83 $
0,83 $
10
0,70 $
6,96 $
100
0,45 $
44,90 $
1000
0,36 $
360,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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