IR3316SPBF

Mfr. #:: IR3316SPBF
Hersteller:: Infineon Technologies AG
Beschreibung:: LOW EMI CURRENT SENSE HIGH SIDE SWITCH IN A 5-LEAD D2-PAK PACKAGE
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IR3316SPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IR3316S, IR3316, IR331, IR33, IR3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IR3316SPBF Beschreibung

***ernational Rectifier: Low EMI Current Sense High Side Switch in a 5-Lead D2-Pak Package

***ical: Power Switch Hi Side 7A 5-Pin (4+Tab) D2PAK Tube

***i-Key: IC SWITCH HISIDE PROGR D2PAK-5

***nell: MOSFET, IPS, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:26V; Current, Id Cont:2.8A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:14V; Voltage, Vgs th Typ:5.4V; Case Style:D2-PAK; Termination Type:SMD; Base Number:3316; Current, Idm Pulse:100A; No. of Pins:5; Power, Pd:2W; Ratio, Current Sensing @ Id Max:9950; Ratio, Current Sensing @ Id Min:7500; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Voltage, Clamping:40V; Voltage, Vcc Max:37V; Voltage, Vcc Min:-16V

***emi: Power MOSFET 24V, 65 A, N-Channel D2PAK, & TO-220

***ser: MOSFETs- Power and Small Signal 24V 65A N-Channel

***r Electronics: Power Field-Effect Transistor, 7.6A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***eco: Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; D2Pak; PD 130W; VGS+/-20V

***ure Electronics: Single N-Channel 100 V 44 mOhm 71nC HEXFET® Power Mosfet - D2PAK

***fin: Transistor NPN Mos IRF540/IRF540NS INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***essParts.Net: INTERNATIONAL RECTIFIER IRF540NS / MOSFET N-CH 100V 33A D2PAK ITE

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W

***ment14 APAC: N CHANNEL MOSFET, 100V, 33A, D2-PAK; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:33A;

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N CH, 100V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.044ohm; Available until stocks are exhausted Alternative available

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:130W; No. of Pins:3Pins RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55

***ure Electronics: Single N-Channel 200 V 0.15 Ohm 67nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 200V 18A D2PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***eco: IRF640NSTRRPBF,MOSFET, 200V, 1 8A, 150 MOHM, 44.7 NC QG, D2-

***ark: Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ure Electronics: Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - D2PAK-3

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***nsix Microsemi: Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, 400V, 10A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Alternate Case Style: D2-PAK; Current Id Max: 10A; Current Temperature: 25°C; External Depth: 15.49mm; External Length / Height: 4.69mm; External Width: 10.54mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 1°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation on 1" Sq. PCB: 3.1W; Pulse Current Idm: 40A; SMD Marking: IRF740S; Termination Type: Surface Mount Device; Voltage Vds: 400V; Voltage Vds Typ: 400V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***(Formerly Allied Electronics): IRF644SPBF N-channel MOSFET Transistor; 14 A; 250 V; 3-Pin D2PAK

***ical: Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK

***ure Electronics: IRF644S Series N-Channel 250 V 280 mOhm Surface Mount Power Mosfet - TO-263

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 14 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 49 / Rise Time ns = 24 / Turn-OFF Delay Time ns = 53 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
98-0369PBF DISTI # 98-0369PBF-ND	Infineon Technologies AG	IC SWITCH HISIDE PROGR D2PAK-5 RoHS: Compliant Min Qty: 150 Container: Tube	Limited Supply - Call
IR3316SPBF DISTI # 70017387	Infineon Technologies AG	LOW EMI CURRENT SENSE HIGH SIDE SWITCH IN A 5-LEAD D2-PAK PACKAGE RoHS: Compliant	0	1:$6.4900 10:$5.8400 25:$5.3100 100:$4.5000 250:$4.1700
IR3316SPBF DISTI # 942-IR3316SPBF	Infineon Technologies AG	Gate Drivers 40V 35A RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IR3316STRRPBF OMO.#: OMO-IR3316STRRPBF	Gate Drivers AUTO LO EMI CURRENT SENSE HI SIDE SWITCH
	Mfr.#: IR3312STRL OMO.#: OMO-IR3312STRL-INFINEON-TECHNOLOGIES	IC SWITCH HI-SIDE 4TERM D2-PAK-5
	Mfr.#: IR3313STRLPBF OMO.#: OMO-IR3313STRLPBF-INFINEON-TECHNOLOGIES	IC SW PROGR CURR SENS D2PAK
	Mfr.#: IR3310 + OMO.#: OMO-IR3310--1190	Neu und Original
	Mfr.#: IR3310STRPBF OMO.#: OMO-IR3310STRPBF-1190	Neu und Original
	Mfr.#: IR3311STRR OMO.#: OMO-IR3311STRR-INFINEON-TECHNOLOGIES	IC SWITCH HI SIDE D2PAK
	Mfr.#: IR3312S OMO.#: OMO-IR3312S-INFINEON-TECHNOLOGIES	IC SWITCH HI-SIDE 50V 2.8A D2PAK
	Mfr.#: IR3313/AUIR3313 OMO.#: OMO-IR3313-AUIR3313-1190	Neu und Original
	Mfr.#: IR3313S OMO.#: OMO-IR3313S-1190	Neu und Original
	Mfr.#: IR3316S/AUIR3316S OMO.#: OMO-IR3316S-AUIR3316S-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von IR3316SPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IR3316S 5
IR3316 8
IR331 55
IR33 113
IR3 1495

IR3316SPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes