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SI4563DY-T1-GE3

SI4563DY-T1-GE3
Mfr. #:
SI4563DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4563DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Band & Spule (TR)
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
8-SO
FET-Typ
N- und P-Kanal
Leistung max
3.25W
Drain-zu-Source-Spannung-Vdss
40V
Eingangskapazität-Ciss-Vds
2390pF @ 20V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
16 mOhm @ 5A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Lade-Qg-Vgs
85nC @ 10V
Tags
SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 40V 8A/6.6A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:NPN & PNP; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
***ment14 APAC
NPN & PNP MOSFET, SOIC; Transistor Polar; NPN & PNP MOSFET, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:8A; Continuous Drain Current Id, P Channel:-6.6A; Drain Source Voltage Vds, N Channel:40V; Drain Source Voltage Vds, P Channel:-40V
Teil # Mfg. Beschreibung Aktie Preis
SI4563DY-T1-GE3
DISTI # SI4563DY-T1-GE3-ND		Vishay SiliconixMOSFET N/P-CH 40V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4563DY-T1-GE3
    DISTI # 781-SI4563DY-GE3    		Vishay IntertechnologiesMOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3

      		 MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
      SI4563DY-T1-E3

      Mfr.#: SI4563DY-T1-E3

      OMO.#: OMO-SI4563DY-T1-E3-VISHAY

      		 MOSFET N/P-CH 40V 8A 8-SOIC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SI4563DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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