IRF3205STRLPBF

Mfr. #:: IRF3205STRLPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT 55V 110A 8mOhm 97.3nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF3205STRLPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF3205STRLPBF Datasheet IRF3205STRLPBF Datasheet (P4-P6)IRF3205STRLPBF Datasheet (P7-P9)IRF3205STRLPBF Datasheet (P10-P11)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 55 V

Id - Kontinuierlicher Drainstrom:: 110 A

Rds On - Drain-Source-Widerstand:: 8 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 97.3 nC

Pd - Verlustleistung:: 200 W

Aufbau:: Single

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon / IR

Produktart:: MOSFET

Werkspackungsmenge:: 800

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001576758

Gewichtseinheit:: 0.139332 oz

Tags: IRF3205STRLP, IRF3205STRL, IRF3205ST, IRF3205S, IRF3205, IRF320, IRF32, IRF3, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF3205STRLPBF Beschreibung

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

***ure Electronics: Single N-Channel 55 V 110 A 8 mOhm HEXFET® Power Mosfet - D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***p One Stop Japan: Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 200 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 62A, 10V 110A Tc -55°C~175°C TJ MOSFET N-CH 55V 110A D2PAK

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes

***nell: MOSFET, N, 55V, 110A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: D2-PAK; Current Id Max: 110A; Current Temperature: 25°C; External Depth: 15.49mm; External Length / Height: 4.69mm; External Width: 10.54mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0.75°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation on 1" Sq. PCB: 3.7W; Pulse Current Idm: 390A; SMD Marking: IRF3205S; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF3205STRLPBF DISTI # V72:2272_13890468	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	800	500:$0.8098 250:$0.8999 100:$0.9025 25:$1.0744 10:$1.0786 1:$1.2156
IRF3205STRLPBF DISTI # IRF3205STRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 55V 110A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1309In Stock	100:$1.3384 10:$1.6660 1:$1.8400
IRF3205STRLPBF DISTI # IRF3205STRLPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 110A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1309In Stock	100:$1.3384 10:$1.6660 1:$1.8400
IRF3205STRLPBF DISTI # IRF3205STRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 55V 110A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	800:$0.9124
IRF3205STRLPBF DISTI # 31228708	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	44000	800:$0.9158
IRF3205STRLPBF DISTI # 31057054	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	800	500:$0.8098 250:$0.8999 100:$0.9025 25:$1.0744 12:$1.0786
IRF3205STRLPBF DISTI # IRF3205STRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 4000	800:$0.5895 1600:$0.5653 2400:$0.5576 4000:$0.5359 8000:$0.5290 20000:$0.5158 40000:$0.5032
IRF3205STRLPBF DISTI # IRF3205STRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$0.6049 1600:$0.5829 3200:$0.5619 4800:$0.5429 8000:$0.5329
IRF3205STRLPBF DISTI # SP001576758	Infineon Technologies AG	Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001576758) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	800:€0.6659 1600:€0.5449 3200:€0.4999 4800:€0.4609 8000:€0.4279
IRF3205STRLPBF DISTI # 42Y0386	Infineon Technologies AG	MOSFET Transistor, N Channel, 110 A, 55 V, 0.008 ohm, 10 V, 4 V RoHS Compliant: Yes	79	1:$1.5500 10:$1.3200 25:$1.2300 50:$1.1400 100:$1.0500 250:$0.9850 500:$0.9190
IRF3205STRLPBF. DISTI # 26AC0580	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:110A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:200W,No. of Pins:3Pins RoHS Compliant: Yes	0
IRF3205STRLPBF DISTI # 70017659	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 8 Milliohms,ID 110A,D2Pak,PD 200W,VGS +/-20V RoHS: Compliant	0	800:$3.2600
IRF3205STRLPBF	International Rectifier	RoHS: Not Compliant	550	1000:$0.7000 500:$0.7300 100:$0.7600 25:$0.8000 1:$0.8600
IRF3205STRLPBF	Infineon Technologies AG	Single N-Channel 55V 8 mOhm 146 nC HEXFET Power Mosfet - D2PAK RoHS: Compliant	641Cut Tape/Mini-Reel	1:$0.9100 50:$0.8000 100:$0.7800 250:$0.7550 500:$0.7300
IRF3205STRLPBF	Infineon Technologies AG	Single N-Channel 55V 8 mOhm 146 nC HEXFET Power Mosfet - D2PAK RoHS: Compliant	60000Reel	800:$0.6550
IRF3205STRLPBF DISTI # 942-IRF3205STRLPBF	Infineon Technologies AG	MOSFET MOSFT 55V 110A 8mOhm 97.3nC RoHS: Compliant	841	1:$1.5500 10:$1.3200 100:$1.0500 500:$0.9190 800:$0.7620
IRF3205STRLPBF DISTI # 8312809P	Infineon Technologies AG	HEXFET N-CH MOSFET 110A 55V D2PAK, RL	510	100:£0.8040 200:£0.7670 400:£0.7290 800:£0.5800
IRF3205STRLPBF DISTI # 8312809	Infineon Technologies AG	HEXFET N-CH MOSFET 110A 55V D2PAK, PK	40	10:£1.0210 100:£0.8040 200:£0.7670 400:£0.7290 800:£0.5800
IRF3205STRLPBF	International Rectifier	75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET	44	13:$1.6780 3:$2.0975 1:$2.5170
IRF3205STRLPBF	International Rectifier	75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET	300	169:$0.8337 51:$0.8933 1:$2.3820
IRF3205STRLPBF	International Rectifier		642
IRF3205STRLPBF DISTI # IRF3205STRLPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,55V,110A,200W,D2PAK	658	1:$0.9385 3:$0.7940 10:$0.6695 100:$0.6263
IRF3205STRLPBF DISTI # IRF3205SPBF-GURT	Infineon Technologies AG	N-Ch 55V 75A 200W 0,008R DPak RoHS: Compliant	13800	10:€1.1500 50:€0.9090 200:€0.8490 500:€0.5285
IRF3205STRLPBF DISTI # 2467988RL	Infineon Technologies AG	MOSFET, N CH, 55V, 110A, TO-263-3 RoHS: Compliant	0	1:$2.4600 10:$2.0900 100:$1.6600 500:$1.4500 800:$1.2100
IRF3205STRLPBF DISTI # 2467988	Infineon Technologies AG	MOSFET, N CH, 55V, 110A, TO-263-3 RoHS: Compliant	79	1:$2.4600 10:$2.0900 100:$1.6600 500:$1.4500 800:$1.2100
IRF3205STRLPBF DISTI # 2467988	Infineon Technologies AG	MOSFET, N CH, 55V, 110A, TO-263-3 RoHS: Compliant	184	5:£1.0400 25:£1.0200 100:£0.7820 250:£0.7440 500:£0.5740
IRF3205STRLPBF DISTI # C1S322000479883	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	800	250:$0.8999 100:$0.9025 25:$1.0744 10:$1.0786
IRF3205STRLPBF DISTI # C1S322000479874	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	44000	2400:$0.6020 1600:$0.7270 800:$0.7870
IRF3205STRLPBF DISTI # XSLY00000000732	INFINEON/IR	D2-PAK (TO-263) RoHS: Compliant	4032	800:$0.6686 4032:$0.6240
IRF3205STRLPBF DISTI # XSFP00000020631	Infineon Technologies AG	Power Field-EffectTransistor,75AI(D),30V,0.0033ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-263AB RoHS: Compliant	40811	800:$1.2100 40811:$1.1400

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von IRF3205STRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,54 $~~; ~~1,54 $~~

10: ~~1,31 $~~; ~~13,10 $~~

100: ~~1,05 $~~; ~~105,00 $~~

500: ~~0,92 $~~; ~~459,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF3205STRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes