DMN1019USN-13

Mfr. #:: DMN1019USN-13
Hersteller:: Diodes Incorporated
Beschreibung:: MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DMN1019USN-13 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN1019USN-13 Datasheet DMN1019USN-13 Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Eingebaute Dioden

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SC-59-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 12 V

Id - Kontinuierlicher Drainstrom:: 9.3 A

Rds On - Drain-Source-Widerstand:: 41 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 530 mV

Vgs - Gate-Source-Spannung:: 8 V

Qg - Gate-Ladung:: 50.6 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Serie:: DMN10

Transistortyp:: 1 N-Channel

Marke:: Eingebaute Dioden

Abfallzeit:: 16.8 ns

Produktart:: MOSFET

Anstiegszeit:: 57.6 ns

Werkspackungsmenge:: 10000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 22.2 ns

Typische Einschaltverzögerungszeit:: 7.6 ns

Gewichtseinheit:: 0.000282 oz

Tags: DMN1019US, DMN1019, DMN101, DMN10, DMN1, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN1019USN-13 Beschreibung

***ical: Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R

***et: Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R

***i-Key: MOSFET N-CH 12V 9.3A SC59

***ure Electronics: N-CH 12V 9.3A SC59

***ark: Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity:n Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530Mv; Power Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; Power Dissipation Pd:680mW; Transistor Case Style:SC-59; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, N-CH, 12V, 9.3A, SC-59; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:9.3A; Napięcie drenu / źródła Vds:12V; Rezystancja przewodzenia Rds(on):0.007ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:530mV; Straty mocy Pd:680mW; Rodzaj obudowy tranzystora:SC-59; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2019)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DMN1019USN-13 DISTI # DMN1019USN-13DITR-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	On Order	10000:$0.1168
DMN1019USN-13 DISTI # DMN1019USN-13DICT-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1493 500:$0.1991 100:$0.2903 10:$0.4230 1:$0.5400
DMN1019USN-13 DISTI # DMN1019USN-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1493 500:$0.1991 100:$0.2903 10:$0.4230 1:$0.5400
DMN1019USN-13 DISTI # DMN1019USN-13	Diodes Incorporated	Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R - Tape and Reel (Alt: DMN1019USN-13) RoHS: Not Compliant Min Qty: 10000 Container: Reel	Americas - 0	10000:$0.0919 20000:$0.0869 40000:$0.0829 60000:$0.0789 100000:$0.0769
DMN1019USN-7 DISTI # 621-DMN1019USN-7	Diodes Incorporated	MOSFET 12V N-Ch Enh FET 2426pF 27.3nC RoHS: Compliant	43527	1:$0.4300 10:$0.3250 100:$0.1760 1000:$0.1320 3000:$0.1140
DMN1019USN-13 DISTI # 621-DMN1019USN-13	Diodes Incorporated	MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W RoHS: Compliant	0	10000:$0.1070

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von DMN1019USN-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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DMN1019USN-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes