SPB03N60C3

SPB03N60C3
Mfr. #:
SPB03N60C3
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS C3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPB03N60C3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INF
Produktkategorie
FETs - Einzeln
Tags
SPB03N60C, SPB03N, SPB03, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Japan
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) TO-263
***et
Trans MOSFET N-CH 600V 3.2A 3-Pin TO-263 T/R
***ark
MOSFET, N, 600V, D2-PAK ;ROHS COMPLIANT: YES
***i-Key
MOSFET N-CH 650V 3.2A D2PAK
***nell
MOSFET, N, 600V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:3.2A; Resistance, Rds On:1.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:D2-PAK; Termination Type:SMD; Current, Idm Pulse:9.6A; Power, Pd:38W; Voltage, Vds:600V; Voltage, Vds Max:600V
***ment14 APAC
Prices include import duty and tax. MOSFET, N, 600V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:38W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:3.2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:9.6A; Termination Type:Surface Mount Device; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
SPB03N60C3ATMA1
DISTI # SPB03N60C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 3.2A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SPB03N60C3ATMA1
    DISTI # SPB03N60C3ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V 3.2A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SPB03N60C3ATMA1
      DISTI # SPB03N60C3ATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 650V 3.2A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SPB03N60C3Infineon Technologies AGPower Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant
        11154
        • 1000:$0.4900
        • 500:$0.5100
        • 100:$0.5300
        • 25:$0.5600
        • 1:$0.6000
        SPB03N60C3ATMA1Infineon Technologies AGPower Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant
        2000
        • 1000:$0.4900
        • 500:$0.5100
        • 100:$0.5300
        • 25:$0.5600
        • 1:$0.6000
        SPB03N60C3E3045Infineon Technologies AG 
        RoHS: Not Compliant
        750
        • 1000:$0.3200
        • 500:$0.3400
        • 100:$0.3600
        • 25:$0.3700
        • 1:$0.4000
        SPB03N60C3
        DISTI # 726-SPB03N60C3
        Infineon Technologies AGMOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS C3
        RoHS: Compliant
        0
          SPB03N60C3
          DISTI # 1471780
          Infineon Technologies AGMOSFET, N, 600V, D2-PAK
          RoHS: Compliant
          0
          • 1:$2.2400
          • 10:$1.8500
          • 100:$1.4900
          • 500:$1.3400
          • 1000:$1.1800
          • 2000:$1.1000
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          MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS S5
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von SPB03N60C3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,74 $
          0,74 $
          10
          0,70 $
          6,98 $
          100
          0,66 $
          66,15 $
          500
          0,62 $
          312,40 $
          1000
          0,59 $
          588,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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