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IRFU3711ZPBF

IRFU3711ZPBF
Mfr. #:
IRFU3711ZPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFU3711ZPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU3711ZPBF DatasheetIRFU3711ZPBF Datasheet (P4-P6)IRFU3711ZPBF Datasheet (P7-P9)IRFU3711ZPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
93 A
Rds On - Drain-Source-Widerstand:
7.8 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
18 nC
Pd - Verlustleistung:
79 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001557746
Gewichtseinheit:
0.139332 oz
Tags
IRFU3711, IRFU371, IRFU37, IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 20V, I-PAK; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:93A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:I-PAK; Termination Type:Through Hole; Current, Idm Pulse:370A; No. of Pins:3; Power Dissipation:79mW; SMD Marking:79; Time, t Off:15ns; Time, t On:12ns; Voltage, Vds Max:20V
***(Formerly Allied Electronics)
MOSFET, 25V, 81A, 5.7 MOHM, 10 NC QG, LOGIC LEVEL, I-PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 25V 81A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:IPAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***emi
Power MOSFET 25V 78A 6 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 25V 14.8A 3-Pin(3+Tab) DPAK-SL Rail
***ser
MOSFETs- Power and Small Signal 25V 78A N-Channel
***r Electronics
Power Field-Effect Transistor, 11.4A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 11.4A/78A IPAK
***emi
Power MOSFET 25V 78A 6 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 25V 14.8A 3-Pin (3+Tab) IPAK Rail
***ser
MOSFETs- Power and Small Signal 25V 78A N-Channel
***r Electronics
Power Field-Effect Transistor, 11.4A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 11.4A/78A IPAK
***nell
MOSFET, N, 25V, I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:78A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:64W; Voltage, Vds Max:25V
***emi
Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 24V 17A 3-Pin(3+Tab) IPAK Rail
***ser
MOSFETs- Power and Small Signal 24V 85A N-Channel
***r Electronics
Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:85A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:78.1W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRFU3711ZPBF
DISTI # IRFU3711ZPBF-ND		Infineon Technologies AGMOSFET N-CH 20V 93A I-PAK
RoHS: Compliant
Min Qty: 675
Container: Tube		Limited Supply - Call
    IRFU3711ZPBF
    DISTI # 70018381    		Infineon Technologies AGIRFU3711ZPBF N-channel MOSFET Transistor,93 A,20 V,3-Pin IPAK
    RoHS: Compliant    		0
    • 675:$1.8400
    • 1350:$1.8030
    • 3375:$1.7480
    • 6750:$1.6740
    • 16875:$1.5640
    IRFU3711ZPBF
    DISTI # 942-IRFU3711ZPBF    		Infineon Technologies AGMOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg
    RoHS: Compliant    		0
      IRFU3711ZPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 1500
        IRFU3711ZPBF
        DISTI # 1436988        		Infineon Technologies AG 
        RoHS: Compliant        		0
        • 1:$2.8800
        • 10:$1.5100
        Bild Teil # Beschreibung
        IRFU3711ZPBF

        Mfr.#: IRFU3711ZPBF

        OMO.#: OMO-IRFU3711ZPBF

        		 MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg
        IRFU3711PBF

        Mfr.#: IRFU3711PBF

        OMO.#: OMO-IRFU3711PBF

        		 MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC
        IRFU3709ZPBF

        Mfr.#: IRFU3709ZPBF

        OMO.#: OMO-IRFU3709ZPBF

        		 MOSFET MOSFT 30V 86A 6.5mOhm 17nC
        IRFU3704PBF

        Mfr.#: IRFU3704PBF

        OMO.#: OMO-IRFU3704PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 20V 75A I-PAK
        IRFU3709Z-701P

        Mfr.#: IRFU3709Z-701P

        OMO.#: OMO-IRFU3709Z-701P-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 86A IPAK
        IRFU3708PBF

        Mfr.#: IRFU3708PBF

        OMO.#: OMO-IRFU3708PBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 30V 61A 12.5mOhm 24nC
        IRFU3711ZPBF

        Mfr.#: IRFU3711ZPBF

        OMO.#: OMO-IRFU3711ZPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg
        IRFU3707ZPBF

        Mfr.#: IRFU3707ZPBF

        OMO.#: OMO-IRFU3707ZPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC
        IRFU3709

        Mfr.#: IRFU3709

        OMO.#: OMO-IRFU3709-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 90A I-PAK
        IRFU3710Z

        Mfr.#: IRFU3710Z

        OMO.#: OMO-IRFU3710Z-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 42A I-PAK
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von IRFU3711ZPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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