GS8161Z18DGT-333IV

GS8161Z18DGT-333IV
Mfr. #:
GS8161Z18DGT-333IV
Hersteller:
GSI Technology
Beschreibung:
SRAM 1.8/2.5V 1M x 18 18M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS8161Z18DGT-333IV Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS8161Z18DGT-333IV Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
18 Mbit
Organisation:
1 M x 18
Zugriffszeit:
5 ns
Maximale Taktfrequenz:
333 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
2.7 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
240 mA, 300 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
TQFP-100
Verpackung:
Tablett
Speichertyp:
SDR
Serie:
GS8161Z18DGT
Typ:
NBT
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
18
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
NBT-SRAM
Tags
GS8161Z18DGT-33, GS8161Z18DGT-3, GS8161Z18DGT, GS8161Z18DG, GS8161Z18D, GS8161Z1, GS8161Z, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5ns/3ns 100-Pin TQFP
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Bild Teil # Beschreibung
GS8161Z18DGT-200I

Mfr.#: GS8161Z18DGT-200I

OMO.#: OMO-GS8161Z18DGT-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-200

Mfr.#: GS8161Z18DGD-200

OMO.#: OMO-GS8161Z18DGD-200

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-150

Mfr.#: GS8161Z18DGD-150

OMO.#: OMO-GS8161Z18DGD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-250

Mfr.#: GS8161Z18DGD-250

OMO.#: OMO-GS8161Z18DGD-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-150V

Mfr.#: GS8161Z18DGT-150V

OMO.#: OMO-GS8161Z18DGT-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-250IV

Mfr.#: GS8161Z18DGT-250IV

OMO.#: OMO-GS8161Z18DGT-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DD-250IV

Mfr.#: GS8161Z18DD-250IV

OMO.#: OMO-GS8161Z18DD-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DD-333IV

Mfr.#: GS8161Z18DD-333IV

OMO.#: OMO-GS8161Z18DD-333IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DD-333

Mfr.#: GS8161Z18DD-333

OMO.#: OMO-GS8161Z18DD-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DD-250

Mfr.#: GS8161Z18DD-250

OMO.#: OMO-GS8161Z18DD-250

SRAM 2.5 or 3.3V 1M x 18 18M
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von GS8161Z18DGT-333IV dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
32,54 $
32,54 $
25
30,21 $
755,25 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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