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IPB60R165CPATMA1

IPB60R165CPATMA1
Mfr. #:
IPB60R165CPATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R165CPATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB60R165CPATMA1 DatasheetIPB60R165CPATMA1 Datasheet (P4-P6)IPB60R165CPATMA1 Datasheet (P7-P9)IPB60R165CPATMA1 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
150 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
52 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
192 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
IPB60R165CP IPB6R165CPXT SP000096439
Gewichtseinheit:
0.139332 oz
Tags
IPB60R165, IPB60R16, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon IPB60R165CPATMA1
***ure Electronics
Single N-Channel 600 V 165 mOhm 39 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 650V 21A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 600V 21A D2PAK
***ronik
N-CH 650V 21A 165mOhm TO263
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:21A; Resistance, Rds On:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:21A; On State Resistance:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***ment14 APAC
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):165mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; Package / Case:TO-263; Power Dissipation Pd:192W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Teil # Mfg. Beschreibung Aktie Preis
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$2.4678
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
  • 500:$3.0140
  • 100:$3.7221
  • 10:$4.5390
  • 1:$5.0800
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
  • 500:$3.0140
  • 100:$3.7221
  • 10:$4.5390
  • 1:$5.0800
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1		Infineon Technologies AGTrans MOSFET N-CH 650V 21A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R165CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.9900
  • 2000:$1.9900
  • 4000:$1.9900
  • 6000:$1.9900
  • 10000:$1.9900
IPB60R165CPATMA1
DISTI # SP000096439		Infineon Technologies AGTrans MOSFET N-CH 650V 21A 3-Pin TO-263 T/R (Alt: SP000096439)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€2.1900
  • 2000:€2.0900
  • 4000:€1.9900
  • 6000:€1.8900
  • 10000:€1.6900
IPB60R165CPATMA1
DISTI # 33P7134		Infineon Technologies AGMOSFET, N CHANNEL, 650V, 21A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$4.2500
  • 10:$3.6100
  • 25:$3.4500
  • 50:$3.2900
  • 100:$3.1300
  • 250:$2.9700
  • 500:$2.6700
IPB60R165CP
DISTI # 726-IPB60R165CP		Infineon Technologies AGMOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
RoHS: Compliant		0
  • 1:$4.2500
  • 10:$3.6100
  • 100:$3.1300
  • 250:$2.9700
  • 500:$2.6700
  • 1000:$2.2500
IPB60R165CPATMA1
DISTI # 726-IPB60R165CPATMA1		Infineon Technologies AGMOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
RoHS: Compliant		0
  • 1:$4.2500
  • 10:$3.6100
  • 100:$3.1300
  • 250:$2.9700
  • 500:$2.6700
  • 1000:$2.2500
IPB60R165CPATMA1
DISTI # 1664017		Infineon Technologies AGMOSFET, N, TO-263
RoHS: Compliant		0
  • 1:£3.1700
  • 10:£2.2800
  • 100:£2.1800
  • 250:£2.0700
  • 500:£1.8500
IPB60R165CPATMA1
DISTI # 1664017RL		Infineon Technologies AGMOSFET, N, TO-263
RoHS: Compliant		0
  • 1:$6.7200
  • 10:$5.7200
  • 100:$4.9600
IPB60R165CPATMA1
DISTI # 1664017		Infineon Technologies AGMOSFET, N, TO-263
RoHS: Compliant		0
  • 1:$6.7200
  • 10:$5.7200
  • 100:$4.9600
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Verfügbarkeit
Aktie:
490
Auf Bestellung:
2473
Menge eingeben:
Der aktuelle Preis von IPB60R165CPATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,24 $
4,24 $
10
3,60 $
36,00 $
100
3,12 $
312,00 $
250
2,96 $
740,00 $
500
2,66 $
1 330,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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