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FDP65N06

FDP65N06
Mfr. #:
FDP65N06
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 60V N-Channel MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDP65N06 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
65 A
Rds On - Drain-Source-Widerstand:
16 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
135 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FDP65N06
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
52 ns
Produktart:
MOSFET
Anstiegszeit:
94 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
98 ns
Typische Einschaltverzögerungszeit:
24 ns
Gewichtseinheit:
0.063493 oz
Tags
FDP6, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 65 A, 60 V, 3-Pin TO-220 ON Semiconductor FDP65N06
***Semiconductor
N-Channel Power MOSFET, UniFETTM, 60 V, 65 A, 16 mΩ, TO-220
***p One Stop Japan
Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Tube
***i-Key
MOSFET N-CH 60V 65A TO-220
***ser
IGBTs 60V N-Channel MOSFET
***inecomponents.com
60V, 65A, NCH MOSFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:65A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 60V, 65A, TO-220; Tran; N CHANNEL MOSFET, 60V, 65A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs Typ:2V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***nell
MOSFET, N TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:65A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.016ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:135W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Capacità Ciss Tipica:1670pF; Configurazione Pin:G(1),D(2)S(3); Corrente Id Max:65A; Corrente di Impulso Idm:260A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Modello Case Alternativo:SOT-78B; Resistenza Stato On Max:16mohm; Resistenza Stato On Tipica:13mohm; Resistenza Termica A da Giunzione a Case:0.92°C/W; Temperatura di Esercizio Min:-55°C; Temperatura di Giunzione Tj Max:150°C; Temperatura di Giunzione Tj Min:-55°C; Tensione Vgs Max:2V; Tensione Vgs th Max:4V
Teil # Mfg. Beschreibung Aktie Preis
FDP65N06
DISTI # V36:1790_06359529		ON Semiconductor60V, 65A, NCH MOSFET0
  • 1000:$0.5418
FDP65N06
DISTI # FDP65N06-ND		ON SemiconductorMOSFET N-CH 60V 65A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1125In Stock
  • 5000:$0.7000
  • 3000:$0.7269
  • 1000:$0.7807
  • 100:$1.1469
  • 25:$1.3460
  • 10:$1.4270
  • 1:$1.5900
FDP65N06
DISTI # FDP65N06		ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP65N06)
RoHS: Compliant
Min Qty: 417
Container: Bulk		Americas - 0
  • 4170:$0.7399
  • 2085:$0.7589
  • 1251:$0.7689
  • 834:$0.7789
  • 417:$0.7839
FDP65N06
DISTI # FDP65N06		ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP65N06)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.5529
  • 500:€0.5959
  • 100:€0.6459
  • 50:€0.7039
  • 25:€0.7749
  • 10:€0.8609
  • 1:€0.9689
FDP65N06
DISTI # FDP65N06		ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP65N06)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.6169
  • 6000:$0.6319
  • 4000:$0.6409
  • 2000:$0.6489
  • 1000:$0.6529
FDP65N06
DISTI # 04M9106		ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 04M9106)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 5000:$0.8710
  • 2500:$0.9020
  • 1000:$0.9640
  • 500:$1.1500
  • 100:$1.3100
  • 10:$1.6200
  • 1:$1.8900
FDP65N06
DISTI # 04M9106		ON SemiconductorN CHANNEL MOSFET, 60V, 65A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Product Range:-RoHS Compliant: Yes64
  • 1:$0.3830
  • 10:$0.3830
  • 100:$0.3830
  • 500:$0.3830
  • 1000:$0.3830
  • 2500:$0.3830
  • 5000:$0.3830
FDP65N06
DISTI # 512-FDP65N06		ON SemiconductorMOSFET 60V N-Channel MOSFET
RoHS: Compliant		1228
  • 1:$1.5700
  • 10:$1.3300
  • 100:$1.0600
  • 500:$0.9360
  • 1000:$0.7750
  • 2000:$0.7220
  • 5000:$0.6950
  • 10000:$0.6680
FDP65N06Fairchild Semiconductor CorporationPower Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		17193
  • 1000:$0.6800
  • 500:$0.7200
  • 100:$0.7500
  • 25:$0.7800
  • 1:$0.8400
FDP65N06
DISTI # 8063567		ON SemiconductorMOSFETFAIRCHILDFDP65N06, PK900
  • 500:£0.7400
  • 250:£0.8040
  • 50:£0.9140
  • 25:£1.0300
  • 5:£1.1520
FDP65N06
DISTI # 2118346		ON SemiconductorN CHANNEL MOSFET, 60V, 65A, TO-220
RoHS: Compliant		64
  • 1000:$1.2000
  • 500:$1.4400
  • 100:$1.6400
  • 10:$2.0400
  • 1:$2.4200
FDP65N06,
DISTI # 1324800		ON SemiconductorMOSFET, N TO-2201050
  • 500:£0.6780
  • 250:£0.7240
  • 100:£0.7690
  • 25:£0.9600
  • 5:£1.0500
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FDP65N06 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,57 $
1,57 $
10
1,33 $
13,30 $
100
1,06 $
106,00 $
500
0,94 $
468,00 $
1000
0,78 $
775,00 $
2000
0,72 $
1 444,00 $
5000
0,70 $
3 475,00 $
10000
0,67 $
6 680,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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