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APT45GP120J

APT45GP120J
Mfr. #:
APT45GP120J
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Transistors FG, IGBT, 1200V, 45A, SOT-227
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT45GP120J Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT45GP120J DatasheetAPT45GP120J Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
SOT-227-4
Montageart:
Chassishalterung
Aufbau:
N-Kanal
Kollektor- Emitterspannung VCEO Max:
1.2 kV
Kollektor-Emitter-Sättigungsspannung:
3.3 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
34 A
Pd - Verlustleistung:
329 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
75 A
Höhe:
9.6 mm
Länge:
38.2 mm
Betriebstemperaturbereich:
- 55 C to + 150 C
Breite:
25.4 mm
Marke:
Mikrochip / Mikrosemi
Kontinuierlicher Kollektorstrom:
75 A
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Handelsname:
POWER MOS 7 IGBT, ISOTOP
Gewichtseinheit:
1.058219 oz
Tags
APT45GP120J, APT45GP, APT45G, APT45, APT4, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 1200V 75A 329000mW 4-Pin SOT-227
***i-Key
IGBT MOD 1200V 75A 329W ISOTOP
***hardson RFPD
POWER IGBT TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
APT45GP120J
DISTI # APT45GP120J-ND		Microsemi CorporationIGBT 1200V 75A 329W SOT227
RoHS: Compliant
Min Qty: 20
Container: Tube		Temporarily Out of Stock
  • 20:$35.5565
APT45GP120JDQ2
DISTI # APT45GP120JDQ2-ND		Microsemi CorporationIGBT 1200V 75A 329W SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 250:$30.9448
  • 100:$33.1551
  • 30:$35.3653
  • 10:$38.2390
  • 1:$40.8900
APT45GP120J
DISTI # 494-APT45GP120J		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
RoHS: Compliant		17
  • 1:$37.2800
  • 2:$36.2600
  • 5:$35.2600
  • 10:$34.2500
  • 25:$31.8300
  • 50:$31.0600
  • 100:$29.6700
  • 250:$27.1200
APT45GP120JDQ2
DISTI # 494-APT45GP120JDQ2		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
RoHS: Compliant		19
  • 1:$40.1000
  • 5:$37.9300
  • 10:$37.5000
  • 25:$34.6800
  • 50:$33.5900
  • 100:$32.5100
  • 250:$30.3400
APT45GP120J
DISTI # APT45GP120J		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		32
  • 13:$26.9600
  • 100:$26.2800
  • 500:$25.9500
APT45GP120JDQ2
DISTI # APT45GP120JDQ2		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		0
  • 12:$28.9800
  • 100:$28.2500
  • 500:$27.9000
Bild Teil # Beschreibung
RD-1215D

Mfr.#: RD-1215D

OMO.#: OMO-RD-1215D-RECOM-POWER

 Isolated DC/DC Converters 2W DC/DC 1kV UNREG 12Vin +/-15Vout
Verfügbarkeit
Aktie:
17
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von APT45GP120J dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
37,28 $
37,28 $
2
36,26 $
72,52 $
5
35,26 $
176,30 $
10
34,25 $
342,50 $
25
31,83 $
795,75 $
50
31,06 $
1 553,00 $
100
29,67 $
2 967,00 $
250
27,12 $
6 780,00 $
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