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SI8800EDB-T2-E1

Mfr. #:
SI8800EDB-T2-E1
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 20V MICROFOOT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI8800EDB-T2-E1 Datenblatt
ECAD Model:
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von SI8800EDB-T2-E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Menge
Stückpreis
ext. Preis
1
0,17 $
0,17 $
10
0,16 $
1,61 $
100
0,15 $
15,24 $
500
0,14 $
71,95 $
1000
0,14 $
135,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
4-XFBGA, CSPBGA
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
4-Microfoot
Aufbau
Dual
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
500mW
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
80 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Lade-Qg-Vgs
8.3nC @ 8V
Pd-Verlustleistung
900 mW
Maximale-Betriebstemperatur
+ 125 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
2.8 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
95 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
5.5 nC
Vorwärts-Transkonduktanz-Min
10 S
Tags
SI8800, SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 8 mO 3.2 nC Surface Mount Power Mosfet - MICRO FOOT
***ark
N-Ch Mosfet Mfoot 1X1 20V 80Mohm @ 4.5V Rohs Compliant: No
***et Europe
Trans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R
***i-Key
MOSFET N-CH 20V MICROFOOT
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI8800EDB-T2-E1
DISTI # V72:2272_09216579
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R
RoHS: Compliant
5755
  • 3000:$0.1433
  • 1000:$0.1597
  • 500:$0.1955
  • 250:$0.2278
  • 100:$0.2285
  • 25:$0.2837
  • 10:$0.2849
  • 1:$0.3432
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1CT-ND
Vishay SiliconixMOSFET N-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
55890In Stock
  • 1000:$0.1951
  • 500:$0.2525
  • 100:$0.3443
  • 10:$0.4590
  • 1:$0.5500
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1DKR-ND
Vishay SiliconixMOSFET N-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
55890In Stock
  • 1000:$0.1951
  • 500:$0.2525
  • 100:$0.3443
  • 10:$0.4590
  • 1:$0.5500
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1TR-ND
Vishay SiliconixMOSFET N-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
54000In Stock
  • 3000:$0.1727
SI8800EDB-T2-E1
DISTI # 29727522
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R
RoHS: Compliant
5755
  • 3000:$0.1433
  • 1000:$0.1597
  • 500:$0.1955
  • 250:$0.2278
  • 100:$0.2285
  • 49:$0.2837
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R (Alt: SI8800EDB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 9000
  • 3000:$2.0720
  • 6000:$1.4290
  • 9000:$1.0626
  • 15000:$0.8633
  • 30000:$0.7819
  • 75000:$0.7534
  • 150000:$0.7270
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8800EDB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 3000:$0.1349
  • 6000:$0.1309
  • 12000:$0.1259
  • 18000:$0.1219
  • 30000:$0.1189
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R (Alt: SI8800EDB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.2819
  • 6000:€0.1919
  • 12000:€0.1649
  • 18000:€0.1529
  • 30000:€0.1419
SI8800EDB-T2-E1
DISTI # 86R3936
Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.066ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:4Pins , RoHS Compliant: Yes0
  • 1:$0.1500
  • 3000:$0.1490
  • 6000:$0.1420
  • 12000:$0.1260
SI8800EDB-T2-E1
DISTI # 69W7244
Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.066ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes0
  • 1:$0.2930
  • 10:$0.2840
  • 100:$0.2240
  • 250:$0.2130
  • 500:$0.1990
  • 1000:$0.1590
SI8800EDB-T2-E1
DISTI # 781-SI8800EDB-T2-E1
Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
RoHS: Compliant
5686
  • 1:$0.4800
  • 10:$0.3660
  • 100:$0.2720
  • 500:$0.2230
  • 1000:$0.1730
  • 3000:$0.1580
  • 6000:$0.1470
SI8800EDB-T2-E1Vishay IntertechnologiesSingle N-Channel 20 V 8 mO 3.2 nC Surface Mount Power Mosfet - MICRO FOOT
RoHS: Compliant
3000Reel
  • 3000:$0.1530
  • 6000:$0.1300
SI8800EDB-T2-E1
DISTI # C1S803601645351
Vishay IntertechnologiesMOSFETs
RoHS: Not Compliant
5755
  • 250:$0.2271
  • 100:$0.2278
  • 25:$0.2824
  • 10:$0.2837
SI8800EDB-T2-E1
DISTI # XSFP00000106590
Vishay Siliconix 
RoHS: Compliant
8076
  • 3000:$0.2093
  • 8076:$0.1962
Bild Teil # Beschreibung
SI8800EDB-T2-E1

Mfr.#: SI8800EDB-T2-E1

OMO.#: OMO-SI8800EDB-T2-E1

MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
SI8800EDB-T2-E1

Mfr.#: SI8800EDB-T2-E1

OMO.#: OMO-SI8800EDB-T2-E1-VISHAY

MOSFET N-CH 20V MICROFOOT
SI8800EDB-T2-E1DKR-ND

Mfr.#: SI8800EDB-T2-E1DKR-ND

OMO.#: OMO-SI8800EDB-T2-E1DKR-ND-1190

Neu und Original
SI8800EDB-T2-E1.

Mfr.#: SI8800EDB-T2-E1.

OMO.#: OMO-SI8800EDB-T2-E1--1190

N-CH MOSFET MFOOT 1X1 20V 80MOHM @ 4.5V ROHS COMPLIANT: NO
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