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IPB065N15N3GATMA1

IPB065N15N3GATMA1
Mfr. #:
IPB065N15N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB065N15N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
130 A
Rds On - Drain-Source-Widerstand:
5.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
93 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
G IPB065N15N3 IPB65N15N3GXT SP000521724
Gewichtseinheit:
0.056438 oz
Tags
IPB065N15N3G, IPB065N15N3, IPB065N15, IPB065N1, IPB065, IPB06, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 6.5 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK-7
***ow.cn
Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 150V, 130A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance
***roFlash
Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-7, RoHS
***nell
MOSFET, N CH, 150V, 130A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7
*** Source Electronics
Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK T/R / MOSFET N-CH 150V 105A D2PAK-7
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***nell
MOSFET, N-CH, 150V, 105A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 105A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***emi
N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ
***Yang
Trans MOSFET N-CH 150V 130A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance
***roFlash
Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00625ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
N-Channel 150 V 92 A 11 mOhm N-Channel Power Trench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 150V, 92A, 11mΩ
***ment14 APAC
MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:92A; Source Voltage Vds:150V; On Resistance
***r Electronics
Power Field-Effect Transistor, 92A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 3.3 k Ω 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 3.3K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 92A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00925ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 234W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ
*** Stop Electro
Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 28.7kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 28.7K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
MOSFET Transistor, N Channel, 98 A, 120 V, 0.0066 ohm, 10 V, 3 V
***ure Electronics
Single N-Channel 120 V 7.7 mOhm 88 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 120V, 98A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Source Voltage Vds:120V; On Resistance
***roFlash
Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 120V, 98A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.0066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Teil # Mfg. Beschreibung Aktie Preis
IPB065N15N3GATMA1
DISTI # V72:2272_06378101		Infineon Technologies AGTrans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		95
  • 25:$5.1080
  • 10:$5.3540
  • 1:$6.5065
IPB065N15N3GATMA1
DISTI # V36:1790_06378101		Infineon Technologies AGTrans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.9170
  • 500000:$2.9200
  • 100000:$3.1290
  • 10000:$3.4900
  • 1000:$3.5500
IPB065N15N3GATMA1
DISTI # IPB065N15N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 130A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9595In Stock
  • 500:$4.1980
  • 100:$4.8210
  • 10:$5.8230
  • 1:$6.4500
IPB065N15N3GATMA1
DISTI # IPB065N15N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 150V 130A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9595In Stock
  • 500:$4.1980
  • 100:$4.8210
  • 10:$5.8230
  • 1:$6.4500
IPB065N15N3GATMA1
DISTI # IPB065N15N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 130A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		9000In Stock
  • 2000:$3.4184
  • 1000:$3.5499
IPB065N15N3GATMA1
DISTI # 32415795		Infineon Technologies AGTrans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$5.1406
IPB065N15N3GATMA1
DISTI # 33099125		Infineon Technologies AGTrans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		95
  • 2:$6.5065
IPB065N15N3GXT
DISTI # IPB065N15N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB065N15N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$3.0900
  • 6000:$3.1900
  • 4000:$3.2900
  • 2000:$3.3900
  • 1000:$3.5900
IPB065N15N3 G
DISTI # IPB065N15N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 150V 130A 7-Pin TO-263 T/R - Bulk (Alt: IPB065N15N3GATMA1)
RoHS: Compliant
Min Qty: 112
Container: Bulk		Americas - 0
  • 560:$2.7900
  • 1120:$2.7900
  • 336:$2.8900
  • 224:$3.0900
  • 112:$3.1900
IPB065N15N3GATMA1
DISTI # 85X6014		Infineon Technologies AGMOSFET Transistor, N Channel, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 500:$3.9200
  • 250:$4.2900
  • 100:$4.4900
  • 50:$4.8400
  • 25:$5.1800
  • 10:$5.4300
  • 1:$6.0100
IPB065N15N3GATMA1
DISTI # 726-IPB065N15N3GATMA		Infineon Technologies AGMOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
RoHS: Compliant		1765
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 100:$4.4500
  • 250:$4.2500
  • 500:$3.8800
  • 1000:$3.3800
  • 2000:$3.2500
IPB065N15N3 G
DISTI # 726-IPB065N15N3G		Infineon Technologies AGMOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
RoHS: Compliant		299
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 100:$4.4500
  • 250:$4.2500
  • 500:$3.8800
  • 1000:$3.3800
  • 2000:$3.2500
IPB065N15N3GATMA1Infineon Technologies AGSingle N-Channel 150 V 6.5 mOhm 70 nC OptiMOS Power Mosfet - D2PAK-7
RoHS: Not Compliant		1000Reel
  • 1000:$3.1300
IPB065N15N3GATMA1Infineon Technologies AG 
RoHS: Not Compliant		55
  • 1000:$2.9500
  • 500:$3.1000
  • 100:$3.2300
  • 25:$3.3700
  • 1:$3.6300
IPB065N15N3GATMA1
DISTI # 9064283P		Infineon Technologies AGMOSFET N-CH 150V 130A OPTIMOS TO263, RL2768
  • 200:£3.0650
  • 100:£3.2500
  • 40:£3.4700
  • 10:£3.9700
IPB065N15N3GATMA1
DISTI # 2443380RL		Infineon Technologies AGMOSFET, N CH, 150V, 130A, TO-263-7
RoHS: Compliant		0
  • 1000:$5.0900
  • 500:$5.8500
  • 250:$6.4000
  • 100:$6.7100
  • 25:$7.7300
  • 10:$8.1100
  • 1:$8.9700
IPB065N15N3GATMA1
DISTI # 2443380		Infineon Technologies AGMOSFET, N CH, 150V, 130A, TO-263-7
RoHS: Compliant		733
  • 1000:$5.0900
  • 500:$5.8500
  • 250:$6.4000
  • 100:$6.7100
  • 25:$7.7300
  • 10:$8.1100
  • 1:$8.9700
IPB065N15N3GATMA1
DISTI # 2443380		Infineon Technologies AGMOSFET, N CH, 150V, 130A, TO-263-7715
  • 500:£3.0200
  • 250:£3.3000
  • 100:£3.4700
  • 10:£3.9900
  • 1:£5.1200
IPB065N15N3GATMA1
DISTI # XSKDRABV0052066		Infineon Technologies AG 
RoHS: Compliant		3000 in Stock0 on Order
  • 3000:$4.3000
  • 1000:$4.6100
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB065N15N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,95 $
5,95 $
10
5,38 $
53,80 $
25
5,13 $
128,25 $
100
4,45 $
445,00 $
250
4,25 $
1 062,50 $
500
3,88 $
1 940,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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