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IRF8707GTRPBF

IRF8707GTRPBF
Mfr. #:
IRF8707GTRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8707GTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8707GTRPBF DatasheetIRF8707GTRPBF Datasheet (P4-P6)IRF8707GTRPBF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IRF8707GTRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
14.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
6.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
4.4 ns
Produktart:
MOSFET
Anstiegszeit:
7.9 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
7.3 ns
Typische Einschaltverzögerungszeit:
6.7 ns
Teil # Aliase:
SP001566566
Gewichtseinheit:
0.017870 oz
Tags
IRF8707G, IRF870, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
***(Formerly Allied Electronics)
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
*** Electronics
In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 13 A, 30 V, 10 Mohm, 10 V, 1.8 V
***et Japan
Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, 30V, 13A, 10 mOhm, 9.5 nC Qg, SO-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipa
***Yang
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
***ure Electronics
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***nsix Microsemi
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***nell
MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC
***Yang
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
***ure Electronics
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***-Wing Technology
ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ure Electronics
N-Channel 30 V 23 mOhm 13 nC Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ
***Yang
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R - Tape and Reel
***enic
30V 8.5A 23m´Î@10V8.5A 2.5W 2.5V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N, SO-8; Transistor Polarity:N; Current Id Max:8.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SO; No. of Pins:8; SVHC:No SVHC (18-Jun-2010); Continuous Drain Current, Id:8.5A; Package / Case:SO-8 (SOIC-8); Termination Type:SMD; Threshold Voltage Vgs Typ:1.7V; Transistor Type:PowerTrench; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF8707GTRPBF
DISTI # V72:2272_13891194		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 3000:$0.1648
  • 1000:$0.1832
  • 500:$0.2039
  • 250:$0.2266
  • 100:$0.2517
  • 25:$0.3711
  • 10:$0.4123
  • 1:$0.5034
IRF8707GTRPBF
DISTI # IRF8707GTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		16391In Stock
  • 1000:$0.2387
  • 500:$0.3024
  • 100:$0.4044
  • 10:$0.5320
  • 1:$0.6300
IRF8707GTRPBF
DISTI # IRF8707GTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		16391In Stock
  • 1000:$0.2387
  • 500:$0.3024
  • 100:$0.4044
  • 10:$0.5320
  • 1:$0.6300
IRF8707GTRPBF
DISTI # IRF8707GTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		12000In Stock
  • 4000:$0.2132
IRF8707GTRPBF
DISTI # 30150658		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 3000:$0.1648
  • 1000:$0.1832
  • 500:$0.2039
  • 250:$0.2266
  • 100:$0.2517
  • 56:$0.3711
IRF8707GTRPBF
DISTI # IRF8707GTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8707GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1289
  • 8000:$0.1249
  • 16000:$0.1199
  • 24000:$0.1159
  • 40000:$0.1139
IRF8707GTRPBF
DISTI # SP001566566		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R (Alt: SP001566566)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2569
  • 8000:€0.1999
  • 16000:€0.1629
  • 24000:€0.1379
  • 40000:€0.1279
IRF8707GTRPBF
DISTI # 91Y4759		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0093ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes1269
  • 1:$0.5300
  • 10:$0.4340
  • 25:$0.3780
  • 50:$0.3210
  • 100:$0.2650
  • 250:$0.2450
  • 500:$0.2250
  • 1000:$0.2050
IRF8707GTRPBF
DISTI # 70019208		Infineon Technologies AGMOSFET,30V,11A,11.9 MOHM,6.2 NC QG,SO-8,HALOGEN-FREE
RoHS: Compliant		0
  • 4000:$0.5300
IRF8707GTRPBF
DISTI # 942-IRF8707GTRPBF		Infineon Technologies AGMOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
RoHS: Compliant		8602
  • 1:$0.5300
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 4000:$0.1740
IRF8707GTRPBFInternational Rectifier 1569
    IRF8707GTRPBF
    DISTI # 8655774P    		Infineon Technologies AGMOSFET N-CH 30V 11A HEXFET SOIC8, RL4350
    • 125:£0.2410
    IRF8707GTRPBFInternational RectifierINSTOCK3452
      IRF8707GTRPBF
      DISTI # C1S322000487040      		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
      RoHS: Compliant      		4000
      • 250:$0.2266
      • 100:$0.2517
      • 25:$0.3711
      • 10:$0.4123
      IRF8707GTRPBF
      DISTI # 2579998      		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
      RoHS: Compliant      		1248
      • 5:£0.3790
      • 25:£0.3570
      • 100:£0.2040
      • 250:£0.1810
      • 500:£0.1580
      IRF8707GTRPBF
      DISTI # 2579998      		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
      RoHS: Compliant      		1229
      • 1:$0.9660
      • 10:$0.8080
      • 100:$0.6060
      • 500:$0.4440
      • 1000:$0.3430
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1991
      Menge eingeben:
      Der aktuelle Preis von IRF8707GTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,49 $
      0,49 $
      10
      0,41 $
      4,07 $
      100
      0,25 $
      24,80 $
      1000
      0,19 $
      192,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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