SI4908DY-T1-GE3

SI4908DY-T1-GE3
Mfr. #:
SI4908DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 40V 5.0A 2.75W 60mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4908DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4908DY-T1-GE3 DatasheetSI4908DY-T1-GE3 Datasheet (P4-P6)SI4908DY-T1-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4908DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI490, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 4.1A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 40V 5A 8-SOIC
***ment14 APAC
MOSFET,NN CH,DIODE,40V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:1.85W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Current Id Max:4.1A; Module Configuration:Dual; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SI4908DY-T1-GE3
DISTI # SI4908DY-T1-GE3-ND
Vishay SiliconixMOSFET 2N-CH 40V 5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4908DY-T1-GE3
    DISTI # 781-SI4908DY-GE3
    Vishay IntertechnologiesMOSFET 40V 5.0A 2.75W 60mohm @ 10V
    RoHS: Compliant
    0
      SI4908DY-T1-GE3
      DISTI # 1858967
      Vishay IntertechnologiesMOSFET,NN CH,DIODE,40V,5A,8-SOIC
      RoHS: Compliant
      0
      • 7500:$0.6530
      • 2500:$0.6750
      • 1000:$0.6990
      • 500:$0.7530
      • 250:$0.8700
      • 100:$1.0000
      • 10:$1.2600
      • 1:$1.5600
      Bild Teil # Beschreibung
      SI4908DY-T1-E3

      Mfr.#: SI4908DY-T1-E3

      OMO.#: OMO-SI4908DY-T1-E3

      MOSFET DUAL N-CH 40V(D-S)
      SI4908DY-T1-GE3

      Mfr.#: SI4908DY-T1-GE3

      OMO.#: OMO-SI4908DY-T1-GE3

      MOSFET 40V 5.0A 2.75W 60mohm @ 10V
      SI4908DY-T1-E3

      Mfr.#: SI4908DY-T1-E3

      OMO.#: OMO-SI4908DY-T1-E3-VISHAY

      MOSFET 2N-CH 40V 5A 8-SOIC
      SI4908DY-T1-GE3

      Mfr.#: SI4908DY-T1-GE3

      OMO.#: OMO-SI4908DY-T1-GE3-VISHAY

      MOSFET 2N-CH 40V 5A 8-SOIC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SI4908DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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